OBSERVATION METHOD OF WAFER ION IMPLANTATION DEFECT

An analysis method of wafer ion implant is presented, the steps of the method comprises: (a) cleave a wafer for analysis, and (b) from these pieces of wafers determine which ones are wafer with defect and set an insulator on the wafer with defect, (c) finally, use scanning electron microscope to obs...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	RUSSELL JEREMY DUNCAN, HSIEH YI-WEI, CHEN PEI-YI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING MEASURING ANGLES MEASURING AREAS MEASURING IRREGULARITIES OF SURFACES OR CONTOURS MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS PHYSICS SEMICONDUCTOR DEVICES TESTING
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