Alignment of Semiconducting Nanowires on Metal Electrodes

The present invention relates to a method for aligning semiconducting nanowires on a metal electrode (12), more particularly to a method for aligning semiconducting nanowires on a metal electrode (12) by which a zinc oxide nanowire and a silicon nanowire are synthesized on a specific region of an el...

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Bibliographische Detailangaben
Hauptverfasser:	PARK KYUNG SOO, KWON SEOK JOON, CHOI YOUNG JIN, PARK JAE GWAN, KANG HAE YOUNG, PARK JAE-HWAN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES NANOTECHNOLOGY PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TRANSPORTING
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Beschreibung
Zusammenfassung:	The present invention relates to a method for aligning semiconducting nanowires on a metal electrode (12), more particularly to a method for aligning semiconducting nanowires on a metal electrode (12) by which a zinc oxide nanowire and a silicon nanowire are synthesized on a specific region of an electrode made of Al, Ti, Pt, etc. and the nanowires are aligned on the wafer scale instantly as they are synthesized. The method for aligning semiconducting nanowires on a metal electrode (12) in accordance with the present invention makes it possible to manufacture multiple nanowire devices at low cost. Thus, the method in accordance with the present invention can be effectively utilized to produce various nano devices, including electronic devices, optoelectronic devices, laser devices, chemical sensors, etc. in large quantity.