Soft Error Robust Static Random Access Memory Cell Storage Configuration

A Static Random Access Memory (SRAM) cell storage configuration is provided with an improved robustness to radiation induced soft errors. The SRAM cell storage configuration comprises the following elements. First and second storage nodes are configured to store complementary voltages. Drive transis...

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Bibliographische Detailangaben

Hauptverfasser:	SACHDEV MANOJ, JAHINUZZAMAN SHAH M
Format:	Patent
Sprache:	eng
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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