Semiconductor Memory Device Having Three Dimensional Structure

Semiconductor Memory Device Having Three Dimensional Structure

A semiconductor device and method for arranging and manufacturing the same are disclosed. The semiconductor device includes a plurality of inverters including at least one first pull-up transistor and first pull-down transistor and inverting and outputting an input signal, respectively; and a plural...

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Hauptverfasser: LIM HOON, NAM HYOU-YOUN, HAN GONG-HEUM, LIM BO-TAK, PARK HAN-BYUNG, JUNG SOON-MOON
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator LIM HOON
NAM HYOU-YOUN
HAN GONG-HEUM
LIM BO-TAK
PARK HAN-BYUNG
JUNG SOON-MOON
description A semiconductor device and method for arranging and manufacturing the same are disclosed. The semiconductor device includes a plurality of inverters including at least one first pull-up transistor and first pull-down transistor and inverting and outputting an input signal, respectively; and a plurality of NAND gates including at least two second pull-up transistor and second pull-down transistor and generating an output signal having a high level if at least one of at least two input signals has a low level, respectively, wherein the at least one first pull-up transistor and first pull-down transistor and the at least two second pull-up transistor and second pull-down transistor are stacked and arranged on at least two layers.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Semiconductor Memory Device Having Three Dimensional Structure
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