METHODS FOR ENHANCING CAPACITORS HAVING ROUGHENED FEATURES TO INCREASE CHARGE-STORAGE CAPACITY

Structures and methods for making a semiconductor structure are discussed. The semiconductor structure includes a rough surface having protrusions formed from an undoped silicon film. If the semiconductor structure is a capacitor, the protrusions help to increase the capacitance of the capacitor. Th...

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Hauptverfasser:	CHEN SHENLIN, PING ER-XUAN, MERCALDI GARRY A, NUTTALL MICHAEL, THAKUR RANDHIR P.S
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES
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creator	CHEN SHENLIN PING ER-XUAN MERCALDI GARRY A NUTTALL MICHAEL THAKUR RANDHIR P.S
description	Structures and methods for making a semiconductor structure are discussed. The semiconductor structure includes a rough surface having protrusions formed from an undoped silicon film. If the semiconductor structure is a capacitor, the protrusions help to increase the capacitance of the capacitor. The semiconductor structure also includes a relatively smooth surface abutting the rough surface, wherein the relatively smooth surface is formed from a polycrystalline material.
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subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES
title	METHODS FOR ENHANCING CAPACITORS HAVING ROUGHENED FEATURES TO INCREASE CHARGE-STORAGE CAPACITY
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