SEMICONDUCTOR THROUGH-ELECTRODE FORMING METHOD

SEMICONDUCTOR THROUGH-ELECTRODE FORMING METHOD

When forming a resin material in a through hole, an electrode pad is formed in the bottom portion of the through hole, an insulating material is formed about the periphery of the through hole and a conductive material is formed in the central portion by an inkjet method, inkjet-ejected resins being...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: HIGASHI KAZUSHI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator HIGASHI KAZUSHI
description When forming a resin material in a through hole, an electrode pad is formed in the bottom portion of the through hole, an insulating material is formed about the periphery of the through hole and a conductive material is formed in the central portion by an inkjet method, inkjet-ejected resins being ejected in such a manner that concavo-convex indentations and projections are formed in the surface thereof, whereby the adhesiveness between the insulating material and the conductive material and the adhesiveness between the insulating material and the inner walls of the through hole can be improved. Therefore, it is possible to suppress mechanical defects such as detachment of conductive material at the interfaces between the inner surface of the through hole and the resin or conductor layer, or electrical defects such as insulation defects, conduction defects, or the like.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2009280647A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2009280647A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2009280647A13</originalsourceid><addsrcrecordid>eNrjZNALdvX1dPb3cwl1DvEPUgjxCPIPdffQdfVxdQ4J8ndxVXDzD_L19HNX8HUN8fB34WFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8aHBRgYGlkYWBmYm5o6GxsSpAgClLCcM</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SEMICONDUCTOR THROUGH-ELECTRODE FORMING METHOD</title><source>esp@cenet</source><creator>HIGASHI KAZUSHI</creator><creatorcontrib>HIGASHI KAZUSHI</creatorcontrib><description>When forming a resin material in a through hole, an electrode pad is formed in the bottom portion of the through hole, an insulating material is formed about the periphery of the through hole and a conductive material is formed in the central portion by an inkjet method, inkjet-ejected resins being ejected in such a manner that concavo-convex indentations and projections are formed in the surface thereof, whereby the adhesiveness between the insulating material and the conductive material and the adhesiveness between the insulating material and the inner walls of the through hole can be improved. Therefore, it is possible to suppress mechanical defects such as detachment of conductive material at the interfaces between the inner surface of the through hole and the resin or conductor layer, or electrical defects such as insulation defects, conduction defects, or the like.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2009</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20091112&amp;DB=EPODOC&amp;CC=US&amp;NR=2009280647A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76294</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20091112&amp;DB=EPODOC&amp;CC=US&amp;NR=2009280647A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HIGASHI KAZUSHI</creatorcontrib><title>SEMICONDUCTOR THROUGH-ELECTRODE FORMING METHOD</title><description>When forming a resin material in a through hole, an electrode pad is formed in the bottom portion of the through hole, an insulating material is formed about the periphery of the through hole and a conductive material is formed in the central portion by an inkjet method, inkjet-ejected resins being ejected in such a manner that concavo-convex indentations and projections are formed in the surface thereof, whereby the adhesiveness between the insulating material and the conductive material and the adhesiveness between the insulating material and the inner walls of the through hole can be improved. Therefore, it is possible to suppress mechanical defects such as detachment of conductive material at the interfaces between the inner surface of the through hole and the resin or conductor layer, or electrical defects such as insulation defects, conduction defects, or the like.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2009</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNALdvX1dPb3cwl1DvEPUgjxCPIPdffQdfVxdQ4J8ndxVXDzD_L19HNX8HUN8fB34WFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8aHBRgYGlkYWBmYm5o6GxsSpAgClLCcM</recordid><startdate>20091112</startdate><enddate>20091112</enddate><creator>HIGASHI KAZUSHI</creator><scope>EVB</scope></search><sort><creationdate>20091112</creationdate><title>SEMICONDUCTOR THROUGH-ELECTRODE FORMING METHOD</title><author>HIGASHI KAZUSHI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2009280647A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2009</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>HIGASHI KAZUSHI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HIGASHI KAZUSHI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR THROUGH-ELECTRODE FORMING METHOD</title><date>2009-11-12</date><risdate>2009</risdate><abstract>When forming a resin material in a through hole, an electrode pad is formed in the bottom portion of the through hole, an insulating material is formed about the periphery of the through hole and a conductive material is formed in the central portion by an inkjet method, inkjet-ejected resins being ejected in such a manner that concavo-convex indentations and projections are formed in the surface thereof, whereby the adhesiveness between the insulating material and the conductive material and the adhesiveness between the insulating material and the inner walls of the through hole can be improved. Therefore, it is possible to suppress mechanical defects such as detachment of conductive material at the interfaces between the inner surface of the through hole and the resin or conductor layer, or electrical defects such as insulation defects, conduction defects, or the like.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US2009280647A1
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title SEMICONDUCTOR THROUGH-ELECTRODE FORMING METHOD
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-22T09%3A45%3A31IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=HIGASHI%20KAZUSHI&rft.date=2009-11-12&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2009280647A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true