CMOS integrated process for fabricating monocrystalline silicon micromechanical elements by porous silicon micromachining

The invention relates to a process for fabricating a monocrystalline Si-micromechanical element integrated with a CMOS circuit element within the CMOS technology, wherein a domain of second conducting property is formed within a substrate of first conducting property, here the second conducting prop...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	VAZSONYI EVA, ADAM ANTALNE, EROS MAGDOLNA, DUCSO CSABA, PAYER KAROLYNE, MOHACSY TIBOR, BARSONY ISTVAN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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