Higher Selectivity, Method for passivating short circuit current paths in semiconductor devices
A method for passivating short circuit defects in a thin film large area photovoltaic device in accordance with an exemplary embodiment is provided. The method employs a passivation agent and a counter electrode disposed in said passivation agent. The method includes controlling an application of cu...
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creator | FRITZSCHE HELLMUT PIETKA GINGER DEMAGGIO GREG |
description | A method for passivating short circuit defects in a thin film large area photovoltaic device in accordance with an exemplary embodiment is provided. The method employs a passivation agent and a counter electrode disposed in said passivation agent. The method includes controlling an application of current between the substrate of said photovoltaic device and said counter electrode so as to ensure high selectivity of modification of a transparent conductive oxide material of said photovoltaic module adjacent said short circuit defect, while leaving the transparent conductive oxide material of said photovoltaic module of non-defect areas in its unmodified form. |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2009246907A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2009246907A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2009246907A13</originalsourceid><addsrcrecordid>eNqNy7EKwjAQgOEuDqK-w4GrQq1S6SiidHGqziVcr81BTUruGvDtzeADOP3L9y-ztubBUoCGRkLlyPrZwYPU-g56H2AyIhyNshtArA8KyAFnTp1DIKdJqBVgB0JvRu-6GTWNHUVGknW26M0otPl1lW3vt-e13tPkW5LJIDnS9tUUeV4Vp7LKz5fD8T_1BbpkPpA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Higher Selectivity, Method for passivating short circuit current paths in semiconductor devices</title><source>esp@cenet</source><creator>FRITZSCHE HELLMUT ; PIETKA GINGER ; DEMAGGIO GREG</creator><creatorcontrib>FRITZSCHE HELLMUT ; PIETKA GINGER ; DEMAGGIO GREG</creatorcontrib><description>A method for passivating short circuit defects in a thin film large area photovoltaic device in accordance with an exemplary embodiment is provided. The method employs a passivation agent and a counter electrode disposed in said passivation agent. The method includes controlling an application of current between the substrate of said photovoltaic device and said counter electrode so as to ensure high selectivity of modification of a transparent conductive oxide material of said photovoltaic module adjacent said short circuit defect, while leaving the transparent conductive oxide material of said photovoltaic module of non-defect areas in its unmodified form.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2009</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20091001&DB=EPODOC&CC=US&NR=2009246907A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20091001&DB=EPODOC&CC=US&NR=2009246907A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>FRITZSCHE HELLMUT</creatorcontrib><creatorcontrib>PIETKA GINGER</creatorcontrib><creatorcontrib>DEMAGGIO GREG</creatorcontrib><title>Higher Selectivity, Method for passivating short circuit current paths in semiconductor devices</title><description>A method for passivating short circuit defects in a thin film large area photovoltaic device in accordance with an exemplary embodiment is provided. The method employs a passivation agent and a counter electrode disposed in said passivation agent. The method includes controlling an application of current between the substrate of said photovoltaic device and said counter electrode so as to ensure high selectivity of modification of a transparent conductive oxide material of said photovoltaic module adjacent said short circuit defect, while leaving the transparent conductive oxide material of said photovoltaic module of non-defect areas in its unmodified form.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2009</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNy7EKwjAQgOEuDqK-w4GrQq1S6SiidHGqziVcr81BTUruGvDtzeADOP3L9y-ztubBUoCGRkLlyPrZwYPU-g56H2AyIhyNshtArA8KyAFnTp1DIKdJqBVgB0JvRu-6GTWNHUVGknW26M0otPl1lW3vt-e13tPkW5LJIDnS9tUUeV4Vp7LKz5fD8T_1BbpkPpA</recordid><startdate>20091001</startdate><enddate>20091001</enddate><creator>FRITZSCHE HELLMUT</creator><creator>PIETKA GINGER</creator><creator>DEMAGGIO GREG</creator><scope>EVB</scope></search><sort><creationdate>20091001</creationdate><title>Higher Selectivity, Method for passivating short circuit current paths in semiconductor devices</title><author>FRITZSCHE HELLMUT ; PIETKA GINGER ; DEMAGGIO GREG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2009246907A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2009</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>FRITZSCHE HELLMUT</creatorcontrib><creatorcontrib>PIETKA GINGER</creatorcontrib><creatorcontrib>DEMAGGIO GREG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>FRITZSCHE HELLMUT</au><au>PIETKA GINGER</au><au>DEMAGGIO GREG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Higher Selectivity, Method for passivating short circuit current paths in semiconductor devices</title><date>2009-10-01</date><risdate>2009</risdate><abstract>A method for passivating short circuit defects in a thin film large area photovoltaic device in accordance with an exemplary embodiment is provided. The method employs a passivation agent and a counter electrode disposed in said passivation agent. The method includes controlling an application of current between the substrate of said photovoltaic device and said counter electrode so as to ensure high selectivity of modification of a transparent conductive oxide material of said photovoltaic module adjacent said short circuit defect, while leaving the transparent conductive oxide material of said photovoltaic module of non-defect areas in its unmodified form.</abstract><oa>free_for_read</oa></addata></record> |
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title | Higher Selectivity, Method for passivating short circuit current paths in semiconductor devices |
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