SEMICONDUCTOR MEMORY DEVICE AND SEMICONDUCTOR MEMORY SYSTEM
A semiconductor memory device includes a plurality of memory cell arrays each including a plurality of memory cells arranged in a matrix pattern, and a plurality of cell plate lines each being shared by the memory cell arrays, each of the cell plate lines corresponding to each of rows of the memory...
Gespeichert in:
Hauptverfasser: | , , , , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | MURAKUKI YASUO IWANARI SHUNICHI MATSUURA MASANORI GOHOU YASUSHI NAKAO YOSHIAKI |
description | A semiconductor memory device includes a plurality of memory cell arrays each including a plurality of memory cells arranged in a matrix pattern, and a plurality of cell plate lines each being shared by the memory cell arrays, each of the cell plate lines corresponding to each of rows of the memory cells and each of the cell plate lines being connected to the memory cells of a corresponding one of the rows. Each of the memory cell arrays includes a plurality of word lines each of which corresponds to each of the rows of the memory cells in the memory cell array. The number of the memory cells connected to each of the cell plate lines is larger than the number of the memory cells connected to one of the word lines corresponding to the each of the cell plate lines. |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2009244951A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2009244951A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2009244951A13</originalsourceid><addsrcrecordid>eNrjZLAOdvX1dPb3cwl1DvEPUvB19fUPilRwcQ3zdHZVcPRzUcAqHxwZHOLqy8PAmpaYU5zKC6W5GZTdXEOcPXRTC_LjU4sLEpNT81JL4kODjQwMLI1MTCxNDR0NjYlTBQC4hiq2</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SEMICONDUCTOR MEMORY DEVICE AND SEMICONDUCTOR MEMORY SYSTEM</title><source>esp@cenet</source><creator>MURAKUKI YASUO ; IWANARI SHUNICHI ; MATSUURA MASANORI ; GOHOU YASUSHI ; NAKAO YOSHIAKI</creator><creatorcontrib>MURAKUKI YASUO ; IWANARI SHUNICHI ; MATSUURA MASANORI ; GOHOU YASUSHI ; NAKAO YOSHIAKI</creatorcontrib><description>A semiconductor memory device includes a plurality of memory cell arrays each including a plurality of memory cells arranged in a matrix pattern, and a plurality of cell plate lines each being shared by the memory cell arrays, each of the cell plate lines corresponding to each of rows of the memory cells and each of the cell plate lines being connected to the memory cells of a corresponding one of the rows. Each of the memory cell arrays includes a plurality of word lines each of which corresponds to each of the rows of the memory cells in the memory cell array. The number of the memory cells connected to each of the cell plate lines is larger than the number of the memory cells connected to one of the word lines corresponding to the each of the cell plate lines.</description><language>eng</language><subject>INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2009</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20091001&DB=EPODOC&CC=US&NR=2009244951A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20091001&DB=EPODOC&CC=US&NR=2009244951A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MURAKUKI YASUO</creatorcontrib><creatorcontrib>IWANARI SHUNICHI</creatorcontrib><creatorcontrib>MATSUURA MASANORI</creatorcontrib><creatorcontrib>GOHOU YASUSHI</creatorcontrib><creatorcontrib>NAKAO YOSHIAKI</creatorcontrib><title>SEMICONDUCTOR MEMORY DEVICE AND SEMICONDUCTOR MEMORY SYSTEM</title><description>A semiconductor memory device includes a plurality of memory cell arrays each including a plurality of memory cells arranged in a matrix pattern, and a plurality of cell plate lines each being shared by the memory cell arrays, each of the cell plate lines corresponding to each of rows of the memory cells and each of the cell plate lines being connected to the memory cells of a corresponding one of the rows. Each of the memory cell arrays includes a plurality of word lines each of which corresponds to each of the rows of the memory cells in the memory cell array. The number of the memory cells connected to each of the cell plate lines is larger than the number of the memory cells connected to one of the word lines corresponding to the each of the cell plate lines.</description><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2009</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAOdvX1dPb3cwl1DvEPUvB19fUPilRwcQ3zdHZVcPRzUcAqHxwZHOLqy8PAmpaYU5zKC6W5GZTdXEOcPXRTC_LjU4sLEpNT81JL4kODjQwMLI1MTCxNDR0NjYlTBQC4hiq2</recordid><startdate>20091001</startdate><enddate>20091001</enddate><creator>MURAKUKI YASUO</creator><creator>IWANARI SHUNICHI</creator><creator>MATSUURA MASANORI</creator><creator>GOHOU YASUSHI</creator><creator>NAKAO YOSHIAKI</creator><scope>EVB</scope></search><sort><creationdate>20091001</creationdate><title>SEMICONDUCTOR MEMORY DEVICE AND SEMICONDUCTOR MEMORY SYSTEM</title><author>MURAKUKI YASUO ; IWANARI SHUNICHI ; MATSUURA MASANORI ; GOHOU YASUSHI ; NAKAO YOSHIAKI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2009244951A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2009</creationdate><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>MURAKUKI YASUO</creatorcontrib><creatorcontrib>IWANARI SHUNICHI</creatorcontrib><creatorcontrib>MATSUURA MASANORI</creatorcontrib><creatorcontrib>GOHOU YASUSHI</creatorcontrib><creatorcontrib>NAKAO YOSHIAKI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MURAKUKI YASUO</au><au>IWANARI SHUNICHI</au><au>MATSUURA MASANORI</au><au>GOHOU YASUSHI</au><au>NAKAO YOSHIAKI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR MEMORY DEVICE AND SEMICONDUCTOR MEMORY SYSTEM</title><date>2009-10-01</date><risdate>2009</risdate><abstract>A semiconductor memory device includes a plurality of memory cell arrays each including a plurality of memory cells arranged in a matrix pattern, and a plurality of cell plate lines each being shared by the memory cell arrays, each of the cell plate lines corresponding to each of rows of the memory cells and each of the cell plate lines being connected to the memory cells of a corresponding one of the rows. Each of the memory cell arrays includes a plurality of word lines each of which corresponds to each of the rows of the memory cells in the memory cell array. The number of the memory cells connected to each of the cell plate lines is larger than the number of the memory cells connected to one of the word lines corresponding to the each of the cell plate lines.</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | eng |
recordid | cdi_epo_espacenet_US2009244951A1 |
source | esp@cenet |
subjects | INFORMATION STORAGE PHYSICS STATIC STORES |
title | SEMICONDUCTOR MEMORY DEVICE AND SEMICONDUCTOR MEMORY SYSTEM |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-29T11%3A30%3A00IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=MURAKUKI%20YASUO&rft.date=2009-10-01&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2009244951A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |