Semiconductor device

The semiconductor device of the present invention includes a first conductive type semiconductor layer; a second conductive type source region formed in a surface layer portion of the semiconductor layer; a groove formed by digging in the source region from a surface thereof; an insulating film lami...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	HINO MASAKI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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