METHOD OF FABRICATING A SEMICONDUCTOR DEVICE

METHOD OF FABRICATING A SEMICONDUCTOR DEVICE

Embodiments relate to a method of fabricating a semiconductor device. In embodiments, a gate pattern may be formed on a semiconductor substrate, and sidewalls having a lower height than a height of the gate pattern may be formed at both sides of the gate pattern using a photoresist pattern. A silici...

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1. Verfasser: MYUNG JUNG-HAK
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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description Embodiments relate to a method of fabricating a semiconductor device. In embodiments, a gate pattern may be formed on a semiconductor substrate, and sidewalls having a lower height than a height of the gate pattern may be formed at both sides of the gate pattern using a photoresist pattern. A silicide layer may be formed on exposed upper surface and side surfaces of the gate pattern and a portion of the semiconductor substrate at both sides of the sidewalls. Therefore, the silicide layer formed on a gate may be enlarged, and may reduce gate resistance.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title METHOD OF FABRICATING A SEMICONDUCTOR DEVICE
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