Methods, Systems and Structures for Forming Semiconductor Structures Incorporating High-Temperature Processing Steps

A method (100) of forming semiconductor structures (202) including high-temperature processing steps (step 118), incorporates the use of a high-temperature nitride-oxide mask (220) over protected regions (214) of the device (202). The invention has application in many different embodiments, includin...

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Bibliographische Detailangaben
Hauptverfasser: CHIDAMBARAM PR, BU HAOWEN, KHAMANKAR RAJESH, GRIDER DOUGLAS T
Format: Patent
Sprache:eng
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Zusammenfassung:A method (100) of forming semiconductor structures (202) including high-temperature processing steps (step 118), incorporates the use of a high-temperature nitride-oxide mask (220) over protected regions (214) of the device (202). The invention has application in many different embodiments, including but not limited to, the formation of recess, strained device regions (224).