METHOD OF FORMING A RECESS CHANNEL TRENCH PATTERN, AND FABRICATING A RECESS CHANNEL TRANSISTOR

A method of forming a recess channel trench pattern for forming a recess channel transistor is provided. A mask layer is formed on a semiconductor substrate, which is then patterned to expose an active region and a portion of an adjacent device isolating layer with an isolated hole type pattern. Usi...

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Bibliographische Detailangaben

Hauptverfasser:	PARK JONGUL, AHN TAE-HYUK, KO YONG-SUN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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