SHALLOW TRENCH ISOLATION ETCH PROCESS

Methods for fabricating one or more shallow trench isolation (STI) structures are provided herein. In some embodiments, a method for fabricating one or more shallow trench isolation (STI) structures may include providing a substrate having a patterned mask layer disposed thereon to define one or mor...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	WEON DAEHEE, KHAN ANISUL, SRINIVASAN SUNIL, SASANO HIROKI, MANI RADHIKA, SHEN MEIHUA, DESHMUKH SHASHANK, GANI NICOLAS
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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