NONVOLATILE MEMORY
A nonvolatile memory wherein remaining lifetimes of memory cells can be accurately determined is provided, the nonvolatile memory includes: plural memory cell groups, assigned with respective addresses, arranged for respective words and used for storing one word of data; plural dummy cell groups als...
Gespeichert in:
1. Verfasser: | |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | ISE MASAHIRO |
description | A nonvolatile memory wherein remaining lifetimes of memory cells can be accurately determined is provided, the nonvolatile memory includes: plural memory cell groups, assigned with respective addresses, arranged for respective words and used for storing one word of data; plural dummy cell groups also assigned the respective addresses and having different ranks of rewriting lifetimes; a writing circuit which, when writing data into a memory cell group having a given address, also writes the data into a dummy cell group having the same address at the same time; a lifetime recognizing circuit which recognizes an estimated number of past writing times by determining whether each dummy cell group can be successfully accessed; and a control section which controls operations of the memory cell groups and the dummy cell groups in response to an externally given command. |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2009168512A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2009168512A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2009168512A13</originalsourceid><addsrcrecordid>eNrjZBDy8_cL8_dxDPH0cVXwdfX1D4rkYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXxocFGBgaWhmYWpoZGjobGxKkCAMuMHzU</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>NONVOLATILE MEMORY</title><source>esp@cenet</source><creator>ISE MASAHIRO</creator><creatorcontrib>ISE MASAHIRO</creatorcontrib><description>A nonvolatile memory wherein remaining lifetimes of memory cells can be accurately determined is provided, the nonvolatile memory includes: plural memory cell groups, assigned with respective addresses, arranged for respective words and used for storing one word of data; plural dummy cell groups also assigned the respective addresses and having different ranks of rewriting lifetimes; a writing circuit which, when writing data into a memory cell group having a given address, also writes the data into a dummy cell group having the same address at the same time; a lifetime recognizing circuit which recognizes an estimated number of past writing times by determining whether each dummy cell group can be successfully accessed; and a control section which controls operations of the memory cell groups and the dummy cell groups in response to an externally given command.</description><language>eng</language><subject>INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2009</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20090702&DB=EPODOC&CC=US&NR=2009168512A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20090702&DB=EPODOC&CC=US&NR=2009168512A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ISE MASAHIRO</creatorcontrib><title>NONVOLATILE MEMORY</title><description>A nonvolatile memory wherein remaining lifetimes of memory cells can be accurately determined is provided, the nonvolatile memory includes: plural memory cell groups, assigned with respective addresses, arranged for respective words and used for storing one word of data; plural dummy cell groups also assigned the respective addresses and having different ranks of rewriting lifetimes; a writing circuit which, when writing data into a memory cell group having a given address, also writes the data into a dummy cell group having the same address at the same time; a lifetime recognizing circuit which recognizes an estimated number of past writing times by determining whether each dummy cell group can be successfully accessed; and a control section which controls operations of the memory cell groups and the dummy cell groups in response to an externally given command.</description><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2009</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBDy8_cL8_dxDPH0cVXwdfX1D4rkYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXxocFGBgaWhmYWpoZGjobGxKkCAMuMHzU</recordid><startdate>20090702</startdate><enddate>20090702</enddate><creator>ISE MASAHIRO</creator><scope>EVB</scope></search><sort><creationdate>20090702</creationdate><title>NONVOLATILE MEMORY</title><author>ISE MASAHIRO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2009168512A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2009</creationdate><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>ISE MASAHIRO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ISE MASAHIRO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>NONVOLATILE MEMORY</title><date>2009-07-02</date><risdate>2009</risdate><abstract>A nonvolatile memory wherein remaining lifetimes of memory cells can be accurately determined is provided, the nonvolatile memory includes: plural memory cell groups, assigned with respective addresses, arranged for respective words and used for storing one word of data; plural dummy cell groups also assigned the respective addresses and having different ranks of rewriting lifetimes; a writing circuit which, when writing data into a memory cell group having a given address, also writes the data into a dummy cell group having the same address at the same time; a lifetime recognizing circuit which recognizes an estimated number of past writing times by determining whether each dummy cell group can be successfully accessed; and a control section which controls operations of the memory cell groups and the dummy cell groups in response to an externally given command.</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | eng |
recordid | cdi_epo_espacenet_US2009168512A1 |
source | esp@cenet |
subjects | INFORMATION STORAGE PHYSICS STATIC STORES |
title | NONVOLATILE MEMORY |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-20T17%3A30%3A52IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=ISE%20MASAHIRO&rft.date=2009-07-02&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2009168512A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |