SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME

A technique that makes it possible to suppress a crystal defect produced in an active area and thereby reduce the fraction defective of semiconductor devices is provided. A first embodiment relates to the planar configuration of SRAM. One of the features of the first embodiment is as illustrated in...

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Bibliographische Detailangaben
Hauptverfasser: UCHIDA TETSUYA, KIJIMA TAKEHIKO, YAMAGUCHI NATSUO, ISHITSUKA NORIO, KIMURA YASUHIRO, YOSHIDA SHOJI, ABIKO MINORU, TAKEUCHI TAKASHI, ISHIDA HIROSHI, MAEDA ATSUSHI
Format: Patent
Sprache:eng
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