FLASH MEMORY DEVICE WITH STRAIGHT WORD LINES

Embodiments of the present invention disclose a memory device having an array of flash memory cells with source contacts that facilitate straight word lines, and a method for producing the same. The array is comprised of a plurality of non-intersecting shallow trench isolation (STI) regions that iso...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	CHANG KUO-TUNG, FASTENKO PAVEL, FANG SHENQING, MIZUTANI KAZUHIRO, WANG ZHIGANG, OGAWA HIROYUKI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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