DIELECTRIC SPACER REMOVAL
The present invention relates to semiconductor devices, and more particularly to a process and structure for removing a dielectric spacer selective to a surface of a semiconductor substrate with substantially no removal of the semiconductor substrate. The method of the present invention can be integ...
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| creator | PARUCHURI VAMSI STEEN MICHELLE L JHA RASHMI MO RENEE T WISE RICHARD ZHANG YING CARTIER EDUARD A KANAKASABAPATHY SIVANANDA NARAYANAN VIJAY LI XI ROBSON MARK T SCHONENBERG KATHRYN T |
| description | The present invention relates to semiconductor devices, and more particularly to a process and structure for removing a dielectric spacer selective to a surface of a semiconductor substrate with substantially no removal of the semiconductor substrate. The method of the present invention can be integrated into a conventional CMOS processing scheme or into a conventional BiCMOS processing scheme. The method includes forming a field effect transistor on a semiconductor substrate, the FET comprising a dielectric spacer and the gate structure, the dielectric spacer located adjacent a sidewall of the gate structure and over a source/drain region in the semiconductor substrate; depositing a first nitride layer over the FET; and removing the nitride layer and the dielectric spacer selective to the semiconductor substrate with substantially no removal of the semiconductor substrate. |
| format | Patent |
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The method of the present invention can be integrated into a conventional CMOS processing scheme or into a conventional BiCMOS processing scheme. The method includes forming a field effect transistor on a semiconductor substrate, the FET comprising a dielectric spacer and the gate structure, the dielectric spacer located adjacent a sidewall of the gate structure and over a source/drain region in the semiconductor substrate; depositing a first nitride layer over the FET; and removing the nitride layer and the dielectric spacer selective to the semiconductor substrate with substantially no removal of the semiconductor substrate.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2009</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20090312&DB=EPODOC&CC=US&NR=2009065817A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76294</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20090312&DB=EPODOC&CC=US&NR=2009065817A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>PARUCHURI VAMSI</creatorcontrib><creatorcontrib>STEEN MICHELLE L</creatorcontrib><creatorcontrib>JHA RASHMI</creatorcontrib><creatorcontrib>MO RENEE T</creatorcontrib><creatorcontrib>WISE RICHARD</creatorcontrib><creatorcontrib>ZHANG YING</creatorcontrib><creatorcontrib>CARTIER EDUARD A</creatorcontrib><creatorcontrib>KANAKASABAPATHY SIVANANDA</creatorcontrib><creatorcontrib>NARAYANAN VIJAY</creatorcontrib><creatorcontrib>LI XI</creatorcontrib><creatorcontrib>ROBSON MARK T</creatorcontrib><creatorcontrib>SCHONENBERG KATHRYN T</creatorcontrib><title>DIELECTRIC SPACER REMOVAL</title><description>The present invention relates to semiconductor devices, and more particularly to a process and structure for removing a dielectric spacer selective to a surface of a semiconductor substrate with substantially no removal of the semiconductor substrate. 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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | DIELECTRIC SPACER REMOVAL |
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