Method of fabricating semiconductor device having silicide layer and semiconductor device fabricated thereby

A method of fabricating a semiconductor device having a silicide layer and a semiconductor device fabricated by the method are provided. The method may involve providing a semiconductor substrate having an active region and a field region, and forming a plurality of gate patterns on each of the acti...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	BAE SU-GON, YOUN KI-SEOG, AHN JONG-HYON
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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