System Including Memory with Resistivity Changing Material and Method of Making the Same

A method of manufacturing a memory cell includes: forming a first electrode, depositing a first insulator material over the first electrode, forming a via in the first insulator material, depositing a resistivity changing material in the via without completely filling the via, and forming a second e...

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Bibliographische Detailangaben

Hauptverfasser:	SCHMIDBAUER SVEN, BAIER ULRICH
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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