ASYMMETRIC BIDIRECTIONAL SILICON-CONTROLLED RECTIFIER

The present invention discloses an asymmetric bidirectional silicon-controlled rectifier, which comprises: a second conduction type substrate; a first conduction type undoped epitaxial layer formed on the substrate; a first well and a second well both formed inside the undoped epitaxial layer and se...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	JIANG RYAN HSININ, KER MING-DOU, TSENG TANG-KUEI, CHUANG CHE-HAO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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