Method for Providing Alignment of a Probe
A method for aligning a probe relative to a Supporting substrate defining a first planar surface, an edge, and a first crystal plane includes the steps of masking the surface of the substrate to define an exposed area on the first surface at the edge; and etching, using an etch reagent, a recess in...
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| creator | NIELSEN PETER FOLMER PETERSEN PETER R.E HANSEN JESPER ERDMAN |
| description | A method for aligning a probe relative to a Supporting substrate defining a first planar surface, an edge, and a first crystal plane includes the steps of masking the surface of the substrate to define an exposed area on the first surface at the edge; and etching, using an etch reagent, a recess in the exposed area, the recess defining first and second opposed sidewalls, an end wall remote from the edge, and a bottom wall. The method further includes the step of providing a probe substrate defining a second planar surface and a second crystal plane identical to the first crystal plane, and positioning the probe substrate so that the first and the second crystal planes are positioned identically when forming a probe from the probe substrate using the etch reagent, wherein the probe defines congruent surfaces to the first and second sidewalls. |
| format | Patent |
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The method further includes the step of providing a probe substrate defining a second planar surface and a second crystal plane identical to the first crystal plane, and positioning the probe substrate so that the first and the second crystal planes are positioned identically when forming a probe from the probe substrate using the etch reagent, wherein the probe defines congruent surfaces to the first and second sidewalls.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; MEASURING ; MEASURING ELECTRIC VARIABLES ; MEASURING MAGNETIC VARIABLES ; METALLURGY ; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 ; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE ; PHYSICS ; SEMICONDUCTOR DEVICES ; TESTING</subject><creationdate>2009</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20090108&DB=EPODOC&CC=US&NR=2009009200A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20090108&DB=EPODOC&CC=US&NR=2009009200A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>NIELSEN PETER FOLMER</creatorcontrib><creatorcontrib>PETERSEN PETER R.E</creatorcontrib><creatorcontrib>HANSEN JESPER ERDMAN</creatorcontrib><title>Method for Providing Alignment of a Probe</title><description>A method for aligning a probe relative to a Supporting substrate defining a first planar surface, an edge, and a first crystal plane includes the steps of masking the surface of the substrate to define an exposed area on the first surface at the edge; and etching, using an etch reagent, a recess in the exposed area, the recess defining first and second opposed sidewalls, an end wall remote from the edge, and a bottom wall. The method further includes the step of providing a probe substrate defining a second planar surface and a second crystal plane identical to the first crystal plane, and positioning the probe substrate so that the first and the second crystal planes are positioned identically when forming a probe from the probe substrate using the etch reagent, wherein the probe defines congruent surfaces to the first and second sidewalls.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>MEASURING</subject><subject>MEASURING ELECTRIC VARIABLES</subject><subject>MEASURING MAGNETIC VARIABLES</subject><subject>METALLURGY</subject><subject>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</subject><subject>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2009</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZND0TS3JyE9RSMsvUggoyi_LTMnMS1dwzMlMz8tNzStRyE9TSARJJKXyMLCmJeYUp_JCaW4GZTfXEGcP3dSC_PjU4oLE5NS81JL40GAjAwNLIAJSjobGxKkCAFkTKNc</recordid><startdate>20090108</startdate><enddate>20090108</enddate><creator>NIELSEN PETER FOLMER</creator><creator>PETERSEN PETER R.E</creator><creator>HANSEN JESPER ERDMAN</creator><scope>EVB</scope></search><sort><creationdate>20090108</creationdate><title>Method for Providing Alignment of a Probe</title><author>NIELSEN PETER FOLMER ; PETERSEN PETER R.E ; HANSEN JESPER ERDMAN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2009009200A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2009</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>MEASURING</topic><topic>MEASURING ELECTRIC VARIABLES</topic><topic>MEASURING MAGNETIC VARIABLES</topic><topic>METALLURGY</topic><topic>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</topic><topic>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>NIELSEN PETER FOLMER</creatorcontrib><creatorcontrib>PETERSEN PETER R.E</creatorcontrib><creatorcontrib>HANSEN JESPER ERDMAN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>NIELSEN PETER FOLMER</au><au>PETERSEN PETER R.E</au><au>HANSEN JESPER ERDMAN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method for Providing Alignment of a Probe</title><date>2009-01-08</date><risdate>2009</risdate><abstract>A method for aligning a probe relative to a Supporting substrate defining a first planar surface, an edge, and a first crystal plane includes the steps of masking the surface of the substrate to define an exposed area on the first surface at the edge; and etching, using an etch reagent, a recess in the exposed area, the recess defining first and second opposed sidewalls, an end wall remote from the edge, and a bottom wall. The method further includes the step of providing a probe substrate defining a second planar surface and a second crystal plane identical to the first crystal plane, and positioning the probe substrate so that the first and the second crystal planes are positioned identically when forming a probe from the probe substrate using the etch reagent, wherein the probe defines congruent surfaces to the first and second sidewalls.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE PHYSICS SEMICONDUCTOR DEVICES TESTING |
| title | Method for Providing Alignment of a Probe |
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