Optically Active Compositions and Combinations of Same with Indium Gallium Nitride Semiconductors

New combinations of semi-conductor devices in conjunction with optically active materials are set forth herein. In particular, light emitting semiconductors fashioned as diodes from indium gallium nitride construction are combined with high-performance optically active Langasite La3GasSi0i4 crystall...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	SCHERBAKOV NIKOLAY VALENTINOVICH, ABRAMOV VLADIMIR SEMENOVICH, SHISHOV ALEXANDER VALERIEVICH, SOCHIN NAUM PETROVICH
Format:	Patent
Sprache:	eng
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS POLISHES SEMICONDUCTOR DEVICES
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