SEMICONDUCTOR STRUCTURE INCLUDING MIXED RARE EARTH OXIDE FORMED ON SILICON

A method (and resultant structure) of forming a semiconductor structure, includes forming a mixed rare earth oxide on silicon. The mixed rare earth oxide is lattice-matched to silicon.

Bibliographische Detailangaben

Hauptverfasser:	GUHA SUPRATIK, BOJARCZUK, JR. NESTOR ALEXANDER, BUCHANAN DOUGLAS ANDREW, NARAYANAN VIJAY, RAGNARSSON LARS-AKE
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY LAYERED PRODUCTS LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM PERFORMING OPERATIONS SEMICONDUCTOR DEVICES TRANSPORTING
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