STABILIZATION OF Ni MONOSILICIDE THIN FILMS IN CMOS DEVICES USING IMPLANTATION OF IONS BEFORE SILICIDATION

A method for forming a stabilized metal silicide film, e.g., contact (source/drain or gate), that does not substantially agglomerate during subsequent thermal treatments, is provided. In the present invention, ions that are capable of attaching to defects within the Si-containing layer are implanted...

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Hauptverfasser:	RODBELL KENNETH P, LAVOIE CHRISTIAN, COIA CEDRIK Y, CARRUTHERS ROY A, DETAVERNIER CHRISTOPHE
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	RODBELL KENNETH P LAVOIE CHRISTIAN COIA CEDRIK Y CARRUTHERS ROY A DETAVERNIER CHRISTOPHE
description	A method for forming a stabilized metal silicide film, e.g., contact (source/drain or gate), that does not substantially agglomerate during subsequent thermal treatments, is provided. In the present invention, ions that are capable of attaching to defects within the Si-containing layer are implanted into the Si-containing layer prior to formation of metal silicide. The implanted ions stabilize the film, because the implants were found to substantially prevent agglomeration or at least delay agglomeration to much higher temperatures than in cases in which no implants were used.
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fullrecord	<record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2008299720A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2008299720A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2008299720A13</originalsourceid><addsrcrecordid>eNqNjD0LwjAURbM4iPofHjgLMQ7aMU0T-yAf4ksdXEqRCIpoof5_DFKcnc7l3suZsjtFWaLFs4wYPAQD_gYu-EC5VFhpiDV6MGgdQQ7KBYJKn1BpgobQ7wHdwUoff4IMglKbcNQwWr7bnE2u3WNIi5EztjQ6qnqV-lebhr67pGd6tw0JzneiKLaCy_Xmv9cHf0g3SA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>STABILIZATION OF Ni MONOSILICIDE THIN FILMS IN CMOS DEVICES USING IMPLANTATION OF IONS BEFORE SILICIDATION</title><source>esp@cenet</source><creator>RODBELL KENNETH P ; LAVOIE CHRISTIAN ; COIA CEDRIK Y ; CARRUTHERS ROY A ; DETAVERNIER CHRISTOPHE</creator><creatorcontrib>RODBELL KENNETH P ; LAVOIE CHRISTIAN ; COIA CEDRIK Y ; CARRUTHERS ROY A ; DETAVERNIER CHRISTOPHE</creatorcontrib><description>A method for forming a stabilized metal silicide film, e.g., contact (source/drain or gate), that does not substantially agglomerate during subsequent thermal treatments, is provided. In the present invention, ions that are capable of attaching to defects within the Si-containing layer are implanted into the Si-containing layer prior to formation of metal silicide. The implanted ions stabilize the film, because the implants were found to substantially prevent agglomeration or at least delay agglomeration to much higher temperatures than in cases in which no implants were used.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2008</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20081204&DB=EPODOC&CC=US&NR=2008299720A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20081204&DB=EPODOC&CC=US&NR=2008299720A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>RODBELL KENNETH P</creatorcontrib><creatorcontrib>LAVOIE CHRISTIAN</creatorcontrib><creatorcontrib>COIA CEDRIK Y</creatorcontrib><creatorcontrib>CARRUTHERS ROY A</creatorcontrib><creatorcontrib>DETAVERNIER CHRISTOPHE</creatorcontrib><title>STABILIZATION OF Ni MONOSILICIDE THIN FILMS IN CMOS DEVICES USING IMPLANTATION OF IONS BEFORE SILICIDATION</title><description>A method for forming a stabilized metal silicide film, e.g., contact (source/drain or gate), that does not substantially agglomerate during subsequent thermal treatments, is provided. In the present invention, ions that are capable of attaching to defects within the Si-containing layer are implanted into the Si-containing layer prior to formation of metal silicide. The implanted ions stabilize the film, because the implants were found to substantially prevent agglomeration or at least delay agglomeration to much higher temperatures than in cases in which no implants were used.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2008</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjD0LwjAURbM4iPofHjgLMQ7aMU0T-yAf4ksdXEqRCIpoof5_DFKcnc7l3suZsjtFWaLFs4wYPAQD_gYu-EC5VFhpiDV6MGgdQQ7KBYJKn1BpgobQ7wHdwUoff4IMglKbcNQwWr7bnE2u3WNIi5EztjQ6qnqV-lebhr67pGd6tw0JzneiKLaCy_Xmv9cHf0g3SA</recordid><startdate>20081204</startdate><enddate>20081204</enddate><creator>RODBELL KENNETH P</creator><creator>LAVOIE CHRISTIAN</creator><creator>COIA CEDRIK Y</creator><creator>CARRUTHERS ROY A</creator><creator>DETAVERNIER CHRISTOPHE</creator><scope>EVB</scope></search><sort><creationdate>20081204</creationdate><title>STABILIZATION OF Ni MONOSILICIDE THIN FILMS IN CMOS DEVICES USING IMPLANTATION OF IONS BEFORE SILICIDATION</title><author>RODBELL KENNETH P ; LAVOIE CHRISTIAN ; COIA CEDRIK Y ; CARRUTHERS ROY A ; DETAVERNIER CHRISTOPHE</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2008299720A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2008</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>RODBELL KENNETH P</creatorcontrib><creatorcontrib>LAVOIE CHRISTIAN</creatorcontrib><creatorcontrib>COIA CEDRIK Y</creatorcontrib><creatorcontrib>CARRUTHERS ROY A</creatorcontrib><creatorcontrib>DETAVERNIER CHRISTOPHE</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>RODBELL KENNETH P</au><au>LAVOIE CHRISTIAN</au><au>COIA CEDRIK Y</au><au>CARRUTHERS ROY A</au><au>DETAVERNIER CHRISTOPHE</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>STABILIZATION OF Ni MONOSILICIDE THIN FILMS IN CMOS DEVICES USING IMPLANTATION OF IONS BEFORE SILICIDATION</title><date>2008-12-04</date><risdate>2008</risdate><abstract>A method for forming a stabilized metal silicide film, e.g., contact (source/drain or gate), that does not substantially agglomerate during subsequent thermal treatments, is provided. In the present invention, ions that are capable of attaching to defects within the Si-containing layer are implanted into the Si-containing layer prior to formation of metal silicide. The implanted ions stabilize the film, because the implants were found to substantially prevent agglomeration or at least delay agglomeration to much higher temperatures than in cases in which no implants were used.</abstract><oa>free_for_read</oa></addata></record>
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subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	STABILIZATION OF Ni MONOSILICIDE THIN FILMS IN CMOS DEVICES USING IMPLANTATION OF IONS BEFORE SILICIDATION
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