FABRICATION OF TRANSISTORS WITH A FULLY SILICIDED GATE ELECTRODE AND CHANNEL STRAIN

An integrated circuit includes one or more transistors on or in a semiconductor substrate. At least one of the transistors includes a gate electrode and source and drain structures. The gate electrode has a fully silicided gate electrode layer with a ratio of Ni:Si ranging from about 2:1 to about 3:...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	PAS MICHAEL FRANCIS, YU SHAOFENG
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!