METHOD AND STRUCTURE FOR REDUCING CRACKS IN A DIELECTRIC LAYER IN CONTACT WITH METAL
A method and structure for reducing cracks in a dielectric in contact with a metal structure. The metal structure comprises a first metal layer; a second metal layer disposed on, and in contact with the first metal layer, the second metal layer being stiffer than the first metal layer; a third metal...
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| creator | LILES BARRY J WHELAN COLIN S |
| description | A method and structure for reducing cracks in a dielectric in contact with a metal structure. The metal structure comprises a first metal layer; a second metal layer disposed on, and in contact with the first metal layer, the second metal layer being stiffer than the first metal layer; a third metal layer disposed on, and in contact with the second metal layer, the second metal layer being stiffer than the third metal layer. An additional metal is included wherein the dielectric layer is disposed between the metal structure and the additional metal. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2008239629A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2008239629A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2008239629A13</originalsourceid><addsrcrecordid>eNqNjEEKwjAQAHvxIOofFjwLtQWxx2WzNcGYwHaDeCpF4km0UP-PCj7A08AwzLzQE6uNBjAY6FQSaRKGNgoIm0QuHIAE6diBC4BgHHsmFUfg8cLytRSDIimcnVr47NAvi9ltuE959eOiWLesZDd5fPZ5GodrfuRXn7qqLPdV3eyqBrf1f9UbuxMwtA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHOD AND STRUCTURE FOR REDUCING CRACKS IN A DIELECTRIC LAYER IN CONTACT WITH METAL</title><source>esp@cenet</source><creator>LILES BARRY J ; WHELAN COLIN S</creator><creatorcontrib>LILES BARRY J ; WHELAN COLIN S</creatorcontrib><description>A method and structure for reducing cracks in a dielectric in contact with a metal structure. The metal structure comprises a first metal layer; a second metal layer disposed on, and in contact with the first metal layer, the second metal layer being stiffer than the first metal layer; a third metal layer disposed on, and in contact with the second metal layer, the second metal layer being stiffer than the third metal layer. An additional metal is included wherein the dielectric layer is disposed between the metal structure and the additional metal.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CAPACITORS ; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2008</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20081002&DB=EPODOC&CC=US&NR=2008239629A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20081002&DB=EPODOC&CC=US&NR=2008239629A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LILES BARRY J</creatorcontrib><creatorcontrib>WHELAN COLIN S</creatorcontrib><title>METHOD AND STRUCTURE FOR REDUCING CRACKS IN A DIELECTRIC LAYER IN CONTACT WITH METAL</title><description>A method and structure for reducing cracks in a dielectric in contact with a metal structure. The metal structure comprises a first metal layer; a second metal layer disposed on, and in contact with the first metal layer, the second metal layer being stiffer than the first metal layer; a third metal layer disposed on, and in contact with the second metal layer, the second metal layer being stiffer than the third metal layer. An additional metal is included wherein the dielectric layer is disposed between the metal structure and the additional metal.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CAPACITORS</subject><subject>CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2008</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjEEKwjAQAHvxIOofFjwLtQWxx2WzNcGYwHaDeCpF4km0UP-PCj7A08AwzLzQE6uNBjAY6FQSaRKGNgoIm0QuHIAE6diBC4BgHHsmFUfg8cLytRSDIimcnVr47NAvi9ltuE959eOiWLesZDd5fPZ5GodrfuRXn7qqLPdV3eyqBrf1f9UbuxMwtA</recordid><startdate>20081002</startdate><enddate>20081002</enddate><creator>LILES BARRY J</creator><creator>WHELAN COLIN S</creator><scope>EVB</scope></search><sort><creationdate>20081002</creationdate><title>METHOD AND STRUCTURE FOR REDUCING CRACKS IN A DIELECTRIC LAYER IN CONTACT WITH METAL</title><author>LILES BARRY J ; WHELAN COLIN S</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2008239629A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2008</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CAPACITORS</topic><topic>CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>LILES BARRY J</creatorcontrib><creatorcontrib>WHELAN COLIN S</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LILES BARRY J</au><au>WHELAN COLIN S</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD AND STRUCTURE FOR REDUCING CRACKS IN A DIELECTRIC LAYER IN CONTACT WITH METAL</title><date>2008-10-02</date><risdate>2008</risdate><abstract>A method and structure for reducing cracks in a dielectric in contact with a metal structure. The metal structure comprises a first metal layer; a second metal layer disposed on, and in contact with the first metal layer, the second metal layer being stiffer than the first metal layer; a third metal layer disposed on, and in contact with the second metal layer, the second metal layer being stiffer than the third metal layer. An additional metal is included wherein the dielectric layer is disposed between the metal structure and the additional metal.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CAPACITORS CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | METHOD AND STRUCTURE FOR REDUCING CRACKS IN A DIELECTRIC LAYER IN CONTACT WITH METAL |
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