APPARATUS AND METHODS FOR INTEGRATED CIRCUIT WITH DEVICES WITH BODY CONTACT AND DEVICES WITH ELECTROSTATIC DISCHARGE PROTECTION
An integrated circuit (IC) includes one or more silicon-on-insulator (SOI) transistors. Each SOI transistor includes a first source region, a second source region, a drain region, a body contact region, a gate, and first and second isolation regions. The body contact region couples electrically to a...
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | LIANG MINCHANG LIU YOWJUANG W |
| description | An integrated circuit (IC) includes one or more silicon-on-insulator (SOI) transistors. Each SOI transistor includes a first source region, a second source region, a drain region, a body contact region, a gate, and first and second isolation regions. The body contact region couples electrically to a body of the SOI transistor. The gate controls current flow between the first and second source regions and a drain region of the transistor. The first isolation region is disposed between the first source region and the body contact region. The second isolation region is disposed between the second source region and the body contact region. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2008232011A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2008232011A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2008232011A13</originalsourceid><addsrcrecordid>eNqNzLEKwkAQBNA0FqL-w4K1kMTGdt3b5BY0F-42ilUIclaigdj76wa1sbMahjfMNHliXaNHbQJgZWDPap0JUDgPUimXI7EBEk-NKBxFLRg-CHH4lK0zJyBXKZK-H36Ud0zqXVBUITASyKIvGWrvdBRx1TyZXLrrEBffnCXLgpXsKvb3Ng59d463-GibkKfpJl_naZZhtv5v9QIu8zzn</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>APPARATUS AND METHODS FOR INTEGRATED CIRCUIT WITH DEVICES WITH BODY CONTACT AND DEVICES WITH ELECTROSTATIC DISCHARGE PROTECTION</title><source>esp@cenet</source><creator>LIANG MINCHANG ; LIU YOWJUANG W</creator><creatorcontrib>LIANG MINCHANG ; LIU YOWJUANG W</creatorcontrib><description>An integrated circuit (IC) includes one or more silicon-on-insulator (SOI) transistors. Each SOI transistor includes a first source region, a second source region, a drain region, a body contact region, a gate, and first and second isolation regions. The body contact region couples electrically to a body of the SOI transistor. The gate controls current flow between the first and second source regions and a drain region of the transistor. The first isolation region is disposed between the first source region and the body contact region. The second isolation region is disposed between the second source region and the body contact region.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS ; GENERATION ; SEMICONDUCTOR DEVICES</subject><creationdate>2008</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20080925&DB=EPODOC&CC=US&NR=2008232011A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76418</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20080925&DB=EPODOC&CC=US&NR=2008232011A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LIANG MINCHANG</creatorcontrib><creatorcontrib>LIU YOWJUANG W</creatorcontrib><title>APPARATUS AND METHODS FOR INTEGRATED CIRCUIT WITH DEVICES WITH BODY CONTACT AND DEVICES WITH ELECTROSTATIC DISCHARGE PROTECTION</title><description>An integrated circuit (IC) includes one or more silicon-on-insulator (SOI) transistors. Each SOI transistor includes a first source region, a second source region, a drain region, a body contact region, a gate, and first and second isolation regions. The body contact region couples electrically to a body of the SOI transistor. The gate controls current flow between the first and second source regions and a drain region of the transistor. The first isolation region is disposed between the first source region and the body contact region. The second isolation region is disposed between the second source region and the body contact region.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CONVERSION OR DISTRIBUTION OF ELECTRIC POWER</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS</subject><subject>GENERATION</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2008</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNzLEKwkAQBNA0FqL-w4K1kMTGdt3b5BY0F-42ilUIclaigdj76wa1sbMahjfMNHliXaNHbQJgZWDPap0JUDgPUimXI7EBEk-NKBxFLRg-CHH4lK0zJyBXKZK-H36Ud0zqXVBUITASyKIvGWrvdBRx1TyZXLrrEBffnCXLgpXsKvb3Ng59d463-GibkKfpJl_naZZhtv5v9QIu8zzn</recordid><startdate>20080925</startdate><enddate>20080925</enddate><creator>LIANG MINCHANG</creator><creator>LIU YOWJUANG W</creator><scope>EVB</scope></search><sort><creationdate>20080925</creationdate><title>APPARATUS AND METHODS FOR INTEGRATED CIRCUIT WITH DEVICES WITH BODY CONTACT AND DEVICES WITH ELECTROSTATIC DISCHARGE PROTECTION</title><author>LIANG MINCHANG ; LIU YOWJUANG W</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2008232011A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2008</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CONVERSION OR DISTRIBUTION OF ELECTRIC POWER</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS</topic><topic>GENERATION</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>LIANG MINCHANG</creatorcontrib><creatorcontrib>LIU YOWJUANG W</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LIANG MINCHANG</au><au>LIU YOWJUANG W</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>APPARATUS AND METHODS FOR INTEGRATED CIRCUIT WITH DEVICES WITH BODY CONTACT AND DEVICES WITH ELECTROSTATIC DISCHARGE PROTECTION</title><date>2008-09-25</date><risdate>2008</risdate><abstract>An integrated circuit (IC) includes one or more silicon-on-insulator (SOI) transistors. Each SOI transistor includes a first source region, a second source region, a drain region, a body contact region, a gate, and first and second isolation regions. The body contact region couples electrically to a body of the SOI transistor. The gate controls current flow between the first and second source regions and a drain region of the transistor. The first isolation region is disposed between the first source region and the body contact region. The second isolation region is disposed between the second source region and the body contact region.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_US2008232011A1 |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS CONVERSION OR DISTRIBUTION OF ELECTRIC POWER ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS GENERATION SEMICONDUCTOR DEVICES |
| title | APPARATUS AND METHODS FOR INTEGRATED CIRCUIT WITH DEVICES WITH BODY CONTACT AND DEVICES WITH ELECTROSTATIC DISCHARGE PROTECTION |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-08T19%3A35%3A05IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=LIANG%20MINCHANG&rft.date=2008-09-25&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2008232011A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |