METHODS FOR FORMING SEMICONDUCTOR STRUCTURES WITH BURIED ISOLATION COLLARS AND SEMICONDUCTOR STRUCTURES FORMED BY THESE METHODS

A semiconductor structure including a trench formed in a substrate and a buried isolation collar that extends about sidewalls of the trench. The buried isolation collar is constituted by an insulator formed from a buried porous region of substrate material. The porous region is formed from a buried...

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Bibliographische Detailangaben
Hauptverfasser: CHENG KANGGUO, MANDELMAN JACK ALLAN
Format: Patent
Sprache:eng
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