Memory Device with Adaptive Sense Unit and Method of Reading a Cell Array

A memory device is provided including memory cells that are capable of switching between at least two states, where the threshold of a sense signal for detecting the current state depends on a data content of the memory cell. Parallel to a user data block, a primary control word including a predeter...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	AUGUSTIN UWE, IRMER SOREN, ZIPPRICH-RASCH VOLKER, HEITZER HANS, KUX ANDREAS, RICHTER DETLEV, KOBERNIK GERT, SEIDEL KONRAD, REISSMANN MIRKO, LOHR DANIEL-ANDRE
Format:	Patent
Sprache:	eng
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
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