HARDWARE DEVELOPMENT TO REDUCE BEVEL DEPOSITION
Embodiments in accordance with the present invention relate to various techniques which may be employed alone or in combination, to reduce or eliminate the deposition of material on the bevel of a semiconductor workpiece. In one approach, a shadow ring overlies the edge of the substrate to impede th...
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| creator | SEN SOOVO LIU JUNTING FODOR MARK A SIVARAMAKRISHNAN VISWESWAREN |
| description | Embodiments in accordance with the present invention relate to various techniques which may be employed alone or in combination, to reduce or eliminate the deposition of material on the bevel of a semiconductor workpiece. In one approach, a shadow ring overlies the edge of the substrate to impede the flow of gases to bevel regions. The geometric feature at the edge of the shadow ring directs the flow of gases toward the wafer in order to maintain thickness uniformity across the wafer while shadowing the edge. In another approach, a substrate heater/support is configured to flow purge gases to the edge of a substrate being supported. These purge gases prevent process gases from reaching the substrate edge and depositing material on bevel regions. |
| format | Patent |
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In one approach, a shadow ring overlies the edge of the substrate to impede the flow of gases to bevel regions. The geometric feature at the edge of the shadow ring directs the flow of gases toward the wafer in order to maintain thickness uniformity across the wafer while shadowing the edge. In another approach, a substrate heater/support is configured to flow purge gases to the edge of a substrate being supported. 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These purge gases prevent process gases from reaching the substrate edge and depositing material on bevel regions.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>PLASMA TECHNIQUE</subject><subject>PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS</subject><subject>PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2008</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZND3cAxyCXcMclVwcQ1z9fEP8HX1C1EI8VcIcnUJdXZVcAKJAuUC_IM9Qzz9_XgYWNMSc4pTeaE0N4Oym2uIs4duakF-fGpxQWJyal5qSXxosJGBgYWhqZGFsYWjoTFxqgCnjScM</recordid><startdate>20080626</startdate><enddate>20080626</enddate><creator>SEN SOOVO</creator><creator>LIU JUNTING</creator><creator>FODOR MARK A</creator><creator>SIVARAMAKRISHNAN VISWESWAREN</creator><scope>EVB</scope></search><sort><creationdate>20080626</creationdate><title>HARDWARE DEVELOPMENT TO REDUCE BEVEL DEPOSITION</title><author>SEN SOOVO ; LIU JUNTING ; FODOR MARK A ; SIVARAMAKRISHNAN VISWESWAREN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2008152838A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2008</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>PLASMA TECHNIQUE</topic><topic>PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS</topic><topic>PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>SEN SOOVO</creatorcontrib><creatorcontrib>LIU JUNTING</creatorcontrib><creatorcontrib>FODOR MARK A</creatorcontrib><creatorcontrib>SIVARAMAKRISHNAN VISWESWAREN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SEN SOOVO</au><au>LIU JUNTING</au><au>FODOR MARK A</au><au>SIVARAMAKRISHNAN VISWESWAREN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>HARDWARE DEVELOPMENT TO REDUCE BEVEL DEPOSITION</title><date>2008-06-26</date><risdate>2008</risdate><abstract>Embodiments in accordance with the present invention relate to various techniques which may be employed alone or in combination, to reduce or eliminate the deposition of material on the bevel of a semiconductor workpiece. 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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | HARDWARE DEVELOPMENT TO REDUCE BEVEL DEPOSITION |
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