SYMMETRIC CAPACITOR STRUCTURE

A structure comprising a first doped region, a second doped region, a third doped region, and a first shallow trench isolation structure formed within a substrate. The first doped region comprises a first dopant having a first polarity. The second doped region forms a first electrode of a capacitor....

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	FENG KAI DI, LIU XUEFENG, COLLINS DAVID S, DING HANYI, HE ZHONG-XIANG
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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