MULTI-STEP DEP-ETCH-DEP HIGH DENSITY PLASMA CHEMICAL VAPOR DEPOSITION PROCESSES FOR DIELECTRIC GAPFILLS

A method of forming a dielectric material in a substrate gap using a high-density plasma is described. The method may include depositing a first portion of the dielectric material into the gap with the high-density plasma. The deposition may form a protruding structure that at least partially blocks...

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Bibliographische Detailangaben
Hauptverfasser: PURNAWAN RIONARD, YIEH ELLIE Y, BLOKING JASON THOMAS, LEE YOUNG S, HUA ZHONG QIANG, WANG ANCHUAN
Format: Patent
Sprache:eng
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