INTEGRATION OF THIN FILM RESISTORS HAVING DIFFERENT TCRs INTO SINGLE DIE

INTEGRATION OF THIN FILM RESISTORS HAVING DIFFERENT TCRs INTO SINGLE DIE

An integrated circuit structure including multiple thin film resistors having different sheet resistances and TCRs includes a first oxide layer ( 2 ) formed on a semiconductor substrate ( 1 ), a first thin film resistor ( 3 ) disposed on the first oxide layer ( 2 ), and a second oxide layer ( 14 ) d...

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1. Verfasser: BEACH ERIC W
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
RESISTORS
SEMICONDUCTOR DEVICES
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description An integrated circuit structure including multiple thin film resistors having different sheet resistances and TCRs includes a first oxide layer ( 2 ) formed on a semiconductor substrate ( 1 ), a first thin film resistor ( 3 ) disposed on the first oxide layer ( 2 ), and a second oxide layer ( 14 ) disposed over the first oxide layer ( 2 ) and first thin film resistor ( 3 ). A second thin film resistor ( 15 ) is formed on the second oxide layer ( 14 ) and a third oxide layer ( 16 ) is formed over the second thin film resistor ( 15 ) and the second oxide layer ( 14 ). Interconnect metallization elements ( 12 A,B & 22 A,B) disposed on at least one of the second ( 14 ) and third ( 16 ) oxide layers electrically contact the circuit element ( 4 ), terminals of the first thin film resistor ( 3 ), and terminals of the second thin film resistor ( 15 ), respectively, through corresponding contact openings through at least one of the second ( 14 ) and third ( 16 ) oxide layers.
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A second thin film resistor ( 15 ) is formed on the second oxide layer ( 14 ) and a third oxide layer ( 16 ) is formed over the second thin film resistor ( 15 ) and the second oxide layer ( 14 ). Interconnect metallization elements ( 12 A,B &amp; 22 A,B) disposed on at least one of the second ( 14 ) and third ( 16 ) oxide layers electrically contact the circuit element ( 4 ), terminals of the first thin film resistor ( 3 ), and terminals of the second thin film resistor ( 15 ), respectively, through corresponding contact openings through at least one of the second ( 14 ) and third ( 16 ) oxide layers.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; RESISTORS ; SEMICONDUCTOR DEVICES</subject><creationdate>2008</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20080605&amp;DB=EPODOC&amp;CC=US&amp;NR=2008132056A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,778,883,25547,76298</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20080605&amp;DB=EPODOC&amp;CC=US&amp;NR=2008132056A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>BEACH ERIC W</creatorcontrib><title>INTEGRATION OF THIN FILM RESISTORS HAVING DIFFERENT TCRs INTO SINGLE DIE</title><description>An integrated circuit structure including multiple thin film resistors having different sheet resistances and TCRs includes a first oxide layer ( 2 ) formed on a semiconductor substrate ( 1 ), a first thin film resistor ( 3 ) disposed on the first oxide layer ( 2 ), and a second oxide layer ( 14 ) disposed over the first oxide layer ( 2 ) and first thin film resistor ( 3 ). A second thin film resistor ( 15 ) is formed on the second oxide layer ( 14 ) and a third oxide layer ( 16 ) is formed over the second thin film resistor ( 15 ) and the second oxide layer ( 14 ). Interconnect metallization elements ( 12 A,B &amp; 22 A,B) disposed on at least one of the second ( 14 ) and third ( 16 ) oxide layers electrically contact the circuit element ( 4 ), terminals of the first thin film resistor ( 3 ), and terminals of the second thin film resistor ( 15 ), respectively, through corresponding contact openings through at least one of the second ( 14 ) and third ( 16 ) oxide layers.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>RESISTORS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2008</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPDw9AtxdQ9yDPH091Pwd1MIAQoouHn6-CoEuQZ7Bof4BwUreDiGefq5K7h4urm5Brn6hSiEOAcVKwA1-isEAyV8XIFSrjwMrGmJOcWpvFCam0HZzTXE2UM3tSA_PrW4IDE5NS-1JD402MjAwMLQ2MjA1MzR0Jg4VQDKES3Z</recordid><startdate>20080605</startdate><enddate>20080605</enddate><creator>BEACH ERIC W</creator><scope>EVB</scope></search><sort><creationdate>20080605</creationdate><title>INTEGRATION OF THIN FILM RESISTORS HAVING DIFFERENT TCRs INTO SINGLE DIE</title><author>BEACH ERIC W</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2008132056A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2008</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>RESISTORS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>BEACH ERIC W</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>BEACH ERIC W</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>INTEGRATION OF THIN FILM RESISTORS HAVING DIFFERENT TCRs INTO SINGLE DIE</title><date>2008-06-05</date><risdate>2008</risdate><abstract>An integrated circuit structure including multiple thin film resistors having different sheet resistances and TCRs includes a first oxide layer ( 2 ) formed on a semiconductor substrate ( 1 ), a first thin film resistor ( 3 ) disposed on the first oxide layer ( 2 ), and a second oxide layer ( 14 ) disposed over the first oxide layer ( 2 ) and first thin film resistor ( 3 ). A second thin film resistor ( 15 ) is formed on the second oxide layer ( 14 ) and a third oxide layer ( 16 ) is formed over the second thin film resistor ( 15 ) and the second oxide layer ( 14 ). Interconnect metallization elements ( 12 A,B &amp; 22 A,B) disposed on at least one of the second ( 14 ) and third ( 16 ) oxide layers electrically contact the circuit element ( 4 ), terminals of the first thin film resistor ( 3 ), and terminals of the second thin film resistor ( 15 ), respectively, through corresponding contact openings through at least one of the second ( 14 ) and third ( 16 ) oxide layers.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
RESISTORS
SEMICONDUCTOR DEVICES
title INTEGRATION OF THIN FILM RESISTORS HAVING DIFFERENT TCRs INTO SINGLE DIE
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