METHOD OF MAKING A CONTACT ON A BACKSIDE OF A DIE

A method of forming a semiconductor device includes forming active circuitry over a semiconductor substrate, wherein the semiconductor substrate has a first major surface and a second major surface and the first active circuitry is formed over the first major surface of the semiconductor substrate....

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Hauptverfasser:	SPARKS TERRY G, RAUF SHAHID
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	SPARKS TERRY G RAUF SHAHID
description	A method of forming a semiconductor device includes forming active circuitry over a semiconductor substrate, wherein the semiconductor substrate has a first major surface and a second major surface and the first active circuitry is formed over the first major surface of the semiconductor substrate. A via is formed within the first semiconductor substrate, wherein the via extends from the first active circuitry to the second major surface of the first semiconductor substrate. A dielectric layer is formed over the second major surface and adjacent the first via. The dielectric layer may include nitrogen and silicon and may be formed by a low pressure, low temperature, or both plasma process.
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subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	METHOD OF MAKING A CONTACT ON A BACKSIDE OF A DIE
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