Contact structure for semiconductor devices

Contact structure for semiconductor devices

A semiconductor device has a substrate of one type of semiconductor material, such as silicon. A contact structure is formed on the substrate, and the contact structure is formed of a compound of a metal and a second type of semiconductor material, such as germanium. The contact structure according...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: CHI DONG Z, CHUA CHEE T, TAN CHENG CHEH D
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator CHI DONG Z
CHUA CHEE T
TAN CHENG CHEH D
description A semiconductor device has a substrate of one type of semiconductor material, such as silicon. A contact structure is formed on the substrate, and the contact structure is formed of a compound of a metal and a second type of semiconductor material, such as germanium. The contact structure according to embodiments of the present invention include a semiconductor material which a different semiconductor material forming the substrate. Higher or lower barrier height is obtained by embodiment of the invention. A method for forming a contact structure in which a substrate of one type of semiconductor material is provided. A layer of another different semiconductor material is formed on the substrate. A layer of metal is then formed on the layer of the other different semiconductor material. Upon annealing, a contact structure is formed on the substrate, which is a compound of the metal and the other different semiconductor material, onto the substrate.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2008093631A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2008093631A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2008093631A13</originalsourceid><addsrcrecordid>eNrjZNB2zs8rSUwuUSguKSpNLiktSlVIyy9SKE7NzUzOz0sBCgF5KallmcmpxTwMrGmJOcWpvFCam0HZzTXE2UM3tSA_PrW4IDE5NS-1JD402MjAwMLA0tjM2NDR0Jg4VQBI7irs</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Contact structure for semiconductor devices</title><source>esp@cenet</source><creator>CHI DONG Z ; CHUA CHEE T ; TAN CHENG CHEH D</creator><creatorcontrib>CHI DONG Z ; CHUA CHEE T ; TAN CHENG CHEH D</creatorcontrib><description>A semiconductor device has a substrate of one type of semiconductor material, such as silicon. A contact structure is formed on the substrate, and the contact structure is formed of a compound of a metal and a second type of semiconductor material, such as germanium. The contact structure according to embodiments of the present invention include a semiconductor material which a different semiconductor material forming the substrate. Higher or lower barrier height is obtained by embodiment of the invention. A method for forming a contact structure in which a substrate of one type of semiconductor material is provided. A layer of another different semiconductor material is formed on the substrate. A layer of metal is then formed on the layer of the other different semiconductor material. Upon annealing, a contact structure is formed on the substrate, which is a compound of the metal and the other different semiconductor material, onto the substrate.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2008</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20080424&amp;DB=EPODOC&amp;CC=US&amp;NR=2008093631A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,778,883,25551,76302</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20080424&amp;DB=EPODOC&amp;CC=US&amp;NR=2008093631A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>CHI DONG Z</creatorcontrib><creatorcontrib>CHUA CHEE T</creatorcontrib><creatorcontrib>TAN CHENG CHEH D</creatorcontrib><title>Contact structure for semiconductor devices</title><description>A semiconductor device has a substrate of one type of semiconductor material, such as silicon. A contact structure is formed on the substrate, and the contact structure is formed of a compound of a metal and a second type of semiconductor material, such as germanium. The contact structure according to embodiments of the present invention include a semiconductor material which a different semiconductor material forming the substrate. Higher or lower barrier height is obtained by embodiment of the invention. A method for forming a contact structure in which a substrate of one type of semiconductor material is provided. A layer of another different semiconductor material is formed on the substrate. A layer of metal is then formed on the layer of the other different semiconductor material. Upon annealing, a contact structure is formed on the substrate, which is a compound of the metal and the other different semiconductor material, onto the substrate.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2008</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNB2zs8rSUwuUSguKSpNLiktSlVIyy9SKE7NzUzOz0sBCgF5KallmcmpxTwMrGmJOcWpvFCam0HZzTXE2UM3tSA_PrW4IDE5NS-1JD402MjAwMLA0tjM2NDR0Jg4VQBI7irs</recordid><startdate>20080424</startdate><enddate>20080424</enddate><creator>CHI DONG Z</creator><creator>CHUA CHEE T</creator><creator>TAN CHENG CHEH D</creator><scope>EVB</scope></search><sort><creationdate>20080424</creationdate><title>Contact structure for semiconductor devices</title><author>CHI DONG Z ; CHUA CHEE T ; TAN CHENG CHEH D</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2008093631A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2008</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>CHI DONG Z</creatorcontrib><creatorcontrib>CHUA CHEE T</creatorcontrib><creatorcontrib>TAN CHENG CHEH D</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>CHI DONG Z</au><au>CHUA CHEE T</au><au>TAN CHENG CHEH D</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Contact structure for semiconductor devices</title><date>2008-04-24</date><risdate>2008</risdate><abstract>A semiconductor device has a substrate of one type of semiconductor material, such as silicon. A contact structure is formed on the substrate, and the contact structure is formed of a compound of a metal and a second type of semiconductor material, such as germanium. The contact structure according to embodiments of the present invention include a semiconductor material which a different semiconductor material forming the substrate. Higher or lower barrier height is obtained by embodiment of the invention. A method for forming a contact structure in which a substrate of one type of semiconductor material is provided. A layer of another different semiconductor material is formed on the substrate. A layer of metal is then formed on the layer of the other different semiconductor material. Upon annealing, a contact structure is formed on the substrate, which is a compound of the metal and the other different semiconductor material, onto the substrate.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US2008093631A1
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Contact structure for semiconductor devices
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-15T22%3A19%3A00IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=CHI%20DONG%20Z&rft.date=2008-04-24&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2008093631A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true