Gas Distribution System for Improved Transient Phase Deposition
Embodiments of the present invention are directed to a gas distribution system which distributes the gas more uniformly into a process chamber. In one embodiment, a gas distribution system comprises a gas ring including an outer surface and an inner surface, and a gas inlet disposed at the outer sur...
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| creator | GUJER DIANA E GUJER RUDOLF DUNCAN ROBERT GEOFFRION BRUNO KRISHNARAJ PADMANABHAN GONDHALEKAR SUDHIR SMITH WHITESELL HARRY RASHEED MUHAMMAD M SALIMIAN SIAMAK |
| description | Embodiments of the present invention are directed to a gas distribution system which distributes the gas more uniformly into a process chamber. In one embodiment, a gas distribution system comprises a gas ring including an outer surface and an inner surface, and a gas inlet disposed at the outer surface of the gas ring. The gas inlet is fluidicly coupled with a first channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of gas outlets are distributed over the inner surface of the gas ring, and are fluidicly coupled with a second channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of orifices are fluidicly coupled between the first channel and the second channel. The plurality of orifices are spaced from the gas inlet by a plurality of distances, and have sizes which vary with the distances from the gas inlet as measured along the first channel, such that the size of the orifice increases with an increase in the distance between the orifice and the gas inlet as measured along the first channel. |
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In one embodiment, a gas distribution system comprises a gas ring including an outer surface and an inner surface, and a gas inlet disposed at the outer surface of the gas ring. The gas inlet is fluidicly coupled with a first channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of gas outlets are distributed over the inner surface of the gas ring, and are fluidicly coupled with a second channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of orifices are fluidicly coupled between the first channel and the second channel. The plurality of orifices are spaced from the gas inlet by a plurality of distances, and have sizes which vary with the distances from the gas inlet as measured along the first channel, such that the size of the orifice increases with an increase in the distance between the orifice and the gas inlet as measured along the first channel.</description><language>eng</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 ; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</subject><creationdate>2008</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20080221&DB=EPODOC&CC=US&NR=2008041821A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25544,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20080221&DB=EPODOC&CC=US&NR=2008041821A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>GUJER DIANA E</creatorcontrib><creatorcontrib>GUJER RUDOLF</creatorcontrib><creatorcontrib>DUNCAN ROBERT</creatorcontrib><creatorcontrib>GEOFFRION BRUNO</creatorcontrib><creatorcontrib>KRISHNARAJ PADMANABHAN</creatorcontrib><creatorcontrib>GONDHALEKAR SUDHIR</creatorcontrib><creatorcontrib>SMITH WHITESELL HARRY</creatorcontrib><creatorcontrib>RASHEED MUHAMMAD M</creatorcontrib><creatorcontrib>SALIMIAN SIAMAK</creatorcontrib><title>Gas Distribution System for Improved Transient Phase Deposition</title><description>Embodiments of the present invention are directed to a gas distribution system which distributes the gas more uniformly into a process chamber. In one embodiment, a gas distribution system comprises a gas ring including an outer surface and an inner surface, and a gas inlet disposed at the outer surface of the gas ring. The gas inlet is fluidicly coupled with a first channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of gas outlets are distributed over the inner surface of the gas ring, and are fluidicly coupled with a second channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of orifices are fluidicly coupled between the first channel and the second channel. The plurality of orifices are spaced from the gas inlet by a plurality of distances, and have sizes which vary with the distances from the gas inlet as measured along the first channel, such that the size of the orifice increases with an increase in the distance between the orifice and the gas inlet as measured along the first channel.</description><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</subject><subject>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2008</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLB3TyxWcMksLinKTCotyczPUwiuLC5JzVVIyy9S8MwtKMovS01RCClKzCvOTM0rUQjISCxOVXBJLcgvzgQp52FgTUvMKU7lhdLcDMpuriHOHrpAFfGpxQWJyal5qSXxocFGBgYWBiaGFkaGjobGxKkCAFfdMeI</recordid><startdate>20080221</startdate><enddate>20080221</enddate><creator>GUJER DIANA E</creator><creator>GUJER RUDOLF</creator><creator>DUNCAN ROBERT</creator><creator>GEOFFRION BRUNO</creator><creator>KRISHNARAJ PADMANABHAN</creator><creator>GONDHALEKAR SUDHIR</creator><creator>SMITH WHITESELL HARRY</creator><creator>RASHEED MUHAMMAD M</creator><creator>SALIMIAN SIAMAK</creator><scope>EVB</scope></search><sort><creationdate>20080221</creationdate><title>Gas Distribution System for Improved Transient Phase Deposition</title><author>GUJER DIANA E ; GUJER RUDOLF ; DUNCAN ROBERT ; GEOFFRION BRUNO ; KRISHNARAJ PADMANABHAN ; GONDHALEKAR SUDHIR ; SMITH WHITESELL HARRY ; RASHEED MUHAMMAD M ; SALIMIAN SIAMAK</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2008041821A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2008</creationdate><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</topic><topic>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</topic><toplevel>online_resources</toplevel><creatorcontrib>GUJER DIANA E</creatorcontrib><creatorcontrib>GUJER RUDOLF</creatorcontrib><creatorcontrib>DUNCAN ROBERT</creatorcontrib><creatorcontrib>GEOFFRION BRUNO</creatorcontrib><creatorcontrib>KRISHNARAJ PADMANABHAN</creatorcontrib><creatorcontrib>GONDHALEKAR SUDHIR</creatorcontrib><creatorcontrib>SMITH WHITESELL HARRY</creatorcontrib><creatorcontrib>RASHEED MUHAMMAD M</creatorcontrib><creatorcontrib>SALIMIAN SIAMAK</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>GUJER DIANA E</au><au>GUJER RUDOLF</au><au>DUNCAN ROBERT</au><au>GEOFFRION BRUNO</au><au>KRISHNARAJ PADMANABHAN</au><au>GONDHALEKAR SUDHIR</au><au>SMITH WHITESELL HARRY</au><au>RASHEED MUHAMMAD M</au><au>SALIMIAN SIAMAK</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Gas Distribution System for Improved Transient Phase Deposition</title><date>2008-02-21</date><risdate>2008</risdate><abstract>Embodiments of the present invention are directed to a gas distribution system which distributes the gas more uniformly into a process chamber. In one embodiment, a gas distribution system comprises a gas ring including an outer surface and an inner surface, and a gas inlet disposed at the outer surface of the gas ring. The gas inlet is fluidicly coupled with a first channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of gas outlets are distributed over the inner surface of the gas ring, and are fluidicly coupled with a second channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of orifices are fluidicly coupled between the first channel and the second channel. The plurality of orifices are spaced from the gas inlet by a plurality of distances, and have sizes which vary with the distances from the gas inlet as measured along the first channel, such that the size of the orifice increases with an increase in the distance between the orifice and the gas inlet as measured along the first channel.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE |
| title | Gas Distribution System for Improved Transient Phase Deposition |
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