SYSTEM AND METHOD OF SELECTIVELY DEPOSITING RUTHENIUM FILMS BY DIGITAL CHEMICAL VAPOR DEPOSITION

A chemical vapor deposition reaction system converts a reactant precursor, which includes the metal Ruthenium, to a vapor during a chemical reaction in order to deposit the metal on a semiconductor wafer. The reactant precursor is Bis(2,2,6,6-tetramethyl-3,5-heptanedionato)(1,5-cyclooctadiene)Ru. An...

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Bibliographische Detailangaben
Hauptverfasser: DEY SANDWIP KUMAR, GOSWAMI JAYDEB
Format: Patent
Sprache:eng
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