MODIFYING THE OPTICAL PROPERTIES OF A NITRIDE OPTOELECTRONIC DEVICE

A method of modifying the optical properties of a processed nitride semiconductor light-emitting device initially comprises disposing the processed nitride semiconductor light-emitting device in a vacuum chamber. One or more nitride semiconductor layers are then grown by molecular beam epitaxy there...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	BARNES JENNIFER M, ALDERMAN JOANNA C, HEFFERNAN JONATHAN, HOOPER STEWART E, KAMIKAWA TAKESHI, KAUER MATTHIAS, TAKAHIRA YOSHIYUKI, BOUSQUET VALERIE
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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