METHOD AND STRUCTURE FOR CREATION OF A METAL INSULATOR METAL CAPACITOR

METHOD AND STRUCTURE FOR CREATION OF A METAL INSULATOR METAL CAPACITOR

The invention is directed to an improved capacitor that reduces edge defects and prevents yield failures. A first embodiment of the invention comprises a protective layer adjacent an interface of a conductive layer with the insulator, while the second embodiment of the invention comprises a protecti...

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Bibliographische Detailangaben
Hauptverfasser: DOWNES KEITH E, COOLBAUGH DOUGLAS D, FEILCHENFELD NATALIE B, BOLAM RONALD J, HE ZHONG-XIANG, ESHUN EBENEZER E
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The invention is directed to an improved capacitor that reduces edge defects and prevents yield failures. A first embodiment of the invention comprises a protective layer adjacent an interface of a conductive layer with the insulator, while the second embodiment of the invention comprises a protective layer on an insulator which is on a conductive layer.