INDIUM FEATURES ON MULTI-CONTACT CHIPS
A device comprising a pixilated semiconductor detector or VLSI chip having plurality of individual indium bumps arrayed on a surface of the detector, wherein the indium bumps are in electrical contact with the surface and are situated in defined locations on the surface is provided. Additionally, a...
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creator | MATTHEWS BRIAN SCHINDLER STEPHEN M BOLOTNIKOV ALEKSEY E |
description | A device comprising a pixilated semiconductor detector or VLSI chip having plurality of individual indium bumps arrayed on a surface of the detector, wherein the indium bumps are in electrical contact with the surface and are situated in defined locations on the surface is provided. Additionally, a hybrid detector comprising a pixilated detector in electrical contact with a VLSI chip, wherein electrical contacts formed from indium metal are made between the pixels of the semiconductor and regions on the VLSI chip corresponding thereto is provided. In another embodiment, a method of forming electrical contacts on a pixilated detector comprising the steps of constraining a shadow mask having an array of holes in predetermined locations above a surface on the detector, aligning the mask above the detector, and evaporating indium metal under vacuum through holes in the mask onto the surface of the detector to form the contacts is described. |
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Additionally, a hybrid detector comprising a pixilated detector in electrical contact with a VLSI chip, wherein electrical contacts formed from indium metal are made between the pixels of the semiconductor and regions on the VLSI chip corresponding thereto is provided. In another embodiment, a method of forming electrical contacts on a pixilated detector comprising the steps of constraining a shadow mask having an array of holes in predetermined locations above a surface on the detector, aligning the mask above the detector, and evaporating indium metal under vacuum through holes in the mask onto the surface of the detector to form the contacts is described.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MEASUREMENT OF NUCLEAR OR X-RADIATION ; MEASURING ; PHYSICS ; SEMICONDUCTOR DEVICES ; TESTING</subject><creationdate>2007</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20070927&DB=EPODOC&CC=US&NR=2007224722A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20070927&DB=EPODOC&CC=US&NR=2007224722A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MATTHEWS BRIAN</creatorcontrib><creatorcontrib>SCHINDLER STEPHEN M</creatorcontrib><creatorcontrib>BOLOTNIKOV ALEKSEY E</creatorcontrib><title>INDIUM FEATURES ON MULTI-CONTACT CHIPS</title><description>A device comprising a pixilated semiconductor detector or VLSI chip having plurality of individual indium bumps arrayed on a surface of the detector, wherein the indium bumps are in electrical contact with the surface and are situated in defined locations on the surface is provided. Additionally, a hybrid detector comprising a pixilated detector in electrical contact with a VLSI chip, wherein electrical contacts formed from indium metal are made between the pixels of the semiconductor and regions on the VLSI chip corresponding thereto is provided. In another embodiment, a method of forming electrical contacts on a pixilated detector comprising the steps of constraining a shadow mask having an array of holes in predetermined locations above a surface on the detector, aligning the mask above the detector, and evaporating indium metal under vacuum through holes in the mask onto the surface of the detector to form the contacts is described.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>MEASUREMENT OF NUCLEAR OR X-RADIATION</subject><subject>MEASURING</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2007</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFDz9HPxDPVVcHN1DAkNcg1W8PdT8A31CfHUdfb3C3F0DlFw9vAMCOZhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfGhwUYGBuZGRiZA7GhoTJwqAFF_JHY</recordid><startdate>20070927</startdate><enddate>20070927</enddate><creator>MATTHEWS BRIAN</creator><creator>SCHINDLER STEPHEN M</creator><creator>BOLOTNIKOV ALEKSEY E</creator><scope>EVB</scope></search><sort><creationdate>20070927</creationdate><title>INDIUM FEATURES ON MULTI-CONTACT CHIPS</title><author>MATTHEWS BRIAN ; SCHINDLER STEPHEN M ; BOLOTNIKOV ALEKSEY E</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2007224722A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2007</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>MEASUREMENT OF NUCLEAR OR X-RADIATION</topic><topic>MEASURING</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>MATTHEWS BRIAN</creatorcontrib><creatorcontrib>SCHINDLER STEPHEN M</creatorcontrib><creatorcontrib>BOLOTNIKOV ALEKSEY E</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MATTHEWS BRIAN</au><au>SCHINDLER STEPHEN M</au><au>BOLOTNIKOV ALEKSEY E</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>INDIUM FEATURES ON MULTI-CONTACT CHIPS</title><date>2007-09-27</date><risdate>2007</risdate><abstract>A device comprising a pixilated semiconductor detector or VLSI chip having plurality of individual indium bumps arrayed on a surface of the detector, wherein the indium bumps are in electrical contact with the surface and are situated in defined locations on the surface is provided. Additionally, a hybrid detector comprising a pixilated detector in electrical contact with a VLSI chip, wherein electrical contacts formed from indium metal are made between the pixels of the semiconductor and regions on the VLSI chip corresponding thereto is provided. In another embodiment, a method of forming electrical contacts on a pixilated detector comprising the steps of constraining a shadow mask having an array of holes in predetermined locations above a surface on the detector, aligning the mask above the detector, and evaporating indium metal under vacuum through holes in the mask onto the surface of the detector to form the contacts is described.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MEASUREMENT OF NUCLEAR OR X-RADIATION MEASURING PHYSICS SEMICONDUCTOR DEVICES TESTING |
title | INDIUM FEATURES ON MULTI-CONTACT CHIPS |
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