Methods of fabricating isolation regions of semiconductor devices and structures thereof

Methods of fabricating isolation regions of semiconductor devices and structures thereof are disclosed. In a preferred embodiment, a semiconductor device includes a workpiece and at least one trench formed in the workpiece. The at least one trench includes sidewalls, a bottom surface, a lower portio...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: HAMPP ROLAND, TILKE ARMIN, HONG BEE K, CULMSEE MARCUS, STAPELMANN CHRIS
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!