Electron emitting member and manufacturing method thereof, cold cathode field emission device and manufacturing method thereof

A cold cathode field emission device comprises; a cathode electrode 11 formed on a supporting member 10 , an insulating layer 12 formed on the supporting member 10 and the cathode electrode 11 , a gate electrode 13 formed on the insulating layer 12 , an opening portion 14 A, 14 B formed through the...

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Bibliographische Detailangaben
Hauptverfasser:	YAGI TAKAO, SHIMAMURA TOSHIKI
Format:	Patent
Sprache:	eng
Schlagworte:	APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PERFORMING OPERATIONS PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL SPRAYING OR ATOMISING IN GENERAL SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING
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Beschreibung
Zusammenfassung:	A cold cathode field emission device comprises; a cathode electrode 11 formed on a supporting member 10 , an insulating layer 12 formed on the supporting member 10 and the cathode electrode 11 , a gate electrode 13 formed on the insulating layer 12 , an opening portion 14 A, 14 B formed through the gate electrode 13 and the insulating layer 12 , and an electron emitting portion 15 formed on the portion of the cathode electrode 11 positioned in the bottom portion of the opening portion 14 B, and said electron emitting portion 15 comprises a matrix, 21 and carbon nanotube structures 20 embedded in the matrix 21 in a state where the top portion of each carbon nanotube structure is projected.