ELECTRICALLY PROGRAMMABLE FUSE FOR SILICON-ON-INSULATOR (SOI) TECHNOLOGY

A fuse structure and method of forming the same is described, wherein the body of the fuse is formed from a crystalline semiconductor body on an insulator, preferably of a silicon-on-insulator wafer, surrounded by a fill-in dielectric. The fill-in dielectric is preferably a material that minimizes s...

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Bibliographische Detailangaben
Hauptverfasser: KOTHANDARAMAN CHANDRASEKHARAN, MACIEJEWSKI EDWARD P
Format: Patent
Sprache:eng
Schlagworte:
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