Semiconductor device, method of generating pattern for semiconductor device, method of manufacturing semiconductor device, and apparatus for generating pattern for semiconductor device
It is an object of the invention to effectively absorb a power noise and to implement the stable operation of a circuit. The invention provides a semiconductor device comprising a bypass capacitor including an MOS structure having a gate electrode formed to be extended from a power wiring region to...
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| creator | HONMA JUNKO BENNO HIROSHI SHIMAZAKI KENJI TSUJIKAWA HIROYUKI ITOH MITSUMI SAWADA MASATOSHI |
| description | It is an object of the invention to effectively absorb a power noise and to implement the stable operation of a circuit. The invention provides a semiconductor device comprising a bypass capacitor including an MOS structure having a gate electrode formed to be extended from a power wiring region to a portion provided under an empty region which is adjacent to the power wiring region and has no other functional layer, and formed through a capacitive insulating film on a diffusion region having one conductivity type, and a substrate contact formed under a ground wiring region and fixing a substrate potential, wherein the bypass capacitor has a contact to come in contact with the power wiring which is formed on a surface of the gate electrode and has the diffusion region having the one conductivity type and a diffusion region of the substrate contact connected to each other. |
| format | Patent |
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The invention provides a semiconductor device comprising a bypass capacitor including an MOS structure having a gate electrode formed to be extended from a power wiring region to a portion provided under an empty region which is adjacent to the power wiring region and has no other functional layer, and formed through a capacitive insulating film on a diffusion region having one conductivity type, and a substrate contact formed under a ground wiring region and fixing a substrate potential, wherein the bypass capacitor has a contact to come in contact with the power wiring which is formed on a surface of the gate electrode and has the diffusion region having the one conductivity type and a diffusion region of the substrate contact connected to each other.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CALCULATING ; COMPUTING ; COUNTING ; ELECTRIC DIGITAL DATA PROCESSING ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; PHYSICS ; SEMICONDUCTOR DEVICES</subject><creationdate>2007</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20070816&DB=EPODOC&CC=US&NR=2007187777A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20070816&DB=EPODOC&CC=US&NR=2007187777A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HONMA JUNKO</creatorcontrib><creatorcontrib>BENNO HIROSHI</creatorcontrib><creatorcontrib>SHIMAZAKI KENJI</creatorcontrib><creatorcontrib>TSUJIKAWA HIROYUKI</creatorcontrib><creatorcontrib>ITOH MITSUMI</creatorcontrib><creatorcontrib>SAWADA MASATOSHI</creatorcontrib><title>Semiconductor device, method of generating pattern for semiconductor device, method of manufacturing semiconductor device, and apparatus for generating pattern for semiconductor device</title><description>It is an object of the invention to effectively absorb a power noise and to implement the stable operation of a circuit. 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The invention provides a semiconductor device comprising a bypass capacitor including an MOS structure having a gate electrode formed to be extended from a power wiring region to a portion provided under an empty region which is adjacent to the power wiring region and has no other functional layer, and formed through a capacitive insulating film on a diffusion region having one conductivity type, and a substrate contact formed under a ground wiring region and fixing a substrate potential, wherein the bypass capacitor has a contact to come in contact with the power wiring which is formed on a surface of the gate electrode and has the diffusion region having the one conductivity type and a diffusion region of the substrate contact connected to each other.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CALCULATING COMPUTING COUNTING ELECTRIC DIGITAL DATA PROCESSING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PHYSICS SEMICONDUCTOR DEVICES |
| title | Semiconductor device, method of generating pattern for semiconductor device, method of manufacturing semiconductor device, and apparatus for generating pattern for semiconductor device |
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