Memory and method for sensing data in a memory using complementary sensing scheme

In a memory ( 100 ), a local data line pair ( 116, 118 ) is precharged to a first logic state and a global data line pair ( 101, 104 ) is precharged to a second logic state. A selected memory cell is coupled to the local data line pair ( 116, 118 ) to develop a differential local data line voltage....

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Bibliographische Detailangaben

Hauptverfasser:	HUNTER BRADFORD L, ZHANG SHAYAN
Format:	Patent
Sprache:	eng
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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