Mechanism for read-only memory built-in self-test
In one embodiment, a method for on-die read only memory (ROM) built-in self-test (BIST) is disclosed. The method comprises testing odd word line entries of a read-only memory (ROM) array by performing two passes through the ROM array to test each odd word line entry for static and delay faults, test...
Gespeichert in:
Hauptverfasser: | , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | THOMAS TESSIL CHHABRA PAWAN |
description | In one embodiment, a method for on-die read only memory (ROM) built-in self-test (BIST) is disclosed. The method comprises testing odd word line entries of a read-only memory (ROM) array by performing two passes through the ROM array to test each odd word line entry for static and delay faults, testing even word line entries of the ROM array by performing two passes through the ROM array to test each even word line entry for static and delay faults, and testing each entry of the ROM array for static faults masked by dynamic faults by performing two passes through the ROM array. Other embodiments are also described. |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2007143650A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2007143650A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2007143650A13</originalsourceid><addsrcrecordid>eNrjZDD0TU3OSMzLLM5VSMsvUihKTUzRzc_LqVTITc3NL6pUSCrNzCnRzcxTKE7NSdMtSS0u4WFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8aHBRgYG5oYmxmamBo6GxsSpAgAp3ixf</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Mechanism for read-only memory built-in self-test</title><source>esp@cenet</source><creator>THOMAS TESSIL ; CHHABRA PAWAN</creator><creatorcontrib>THOMAS TESSIL ; CHHABRA PAWAN</creatorcontrib><description>In one embodiment, a method for on-die read only memory (ROM) built-in self-test (BIST) is disclosed. The method comprises testing odd word line entries of a read-only memory (ROM) array by performing two passes through the ROM array to test each odd word line entry for static and delay faults, testing even word line entries of the ROM array by performing two passes through the ROM array to test each even word line entry for static and delay faults, and testing each entry of the ROM array for static faults masked by dynamic faults by performing two passes through the ROM array. Other embodiments are also described.</description><language>eng</language><subject>INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2007</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20070621&DB=EPODOC&CC=US&NR=2007143650A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20070621&DB=EPODOC&CC=US&NR=2007143650A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>THOMAS TESSIL</creatorcontrib><creatorcontrib>CHHABRA PAWAN</creatorcontrib><title>Mechanism for read-only memory built-in self-test</title><description>In one embodiment, a method for on-die read only memory (ROM) built-in self-test (BIST) is disclosed. The method comprises testing odd word line entries of a read-only memory (ROM) array by performing two passes through the ROM array to test each odd word line entry for static and delay faults, testing even word line entries of the ROM array by performing two passes through the ROM array to test each even word line entry for static and delay faults, and testing each entry of the ROM array for static faults masked by dynamic faults by performing two passes through the ROM array. Other embodiments are also described.</description><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2007</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDD0TU3OSMzLLM5VSMsvUihKTUzRzc_LqVTITc3NL6pUSCrNzCnRzcxTKE7NSdMtSS0u4WFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8aHBRgYG5oYmxmamBo6GxsSpAgAp3ixf</recordid><startdate>20070621</startdate><enddate>20070621</enddate><creator>THOMAS TESSIL</creator><creator>CHHABRA PAWAN</creator><scope>EVB</scope></search><sort><creationdate>20070621</creationdate><title>Mechanism for read-only memory built-in self-test</title><author>THOMAS TESSIL ; CHHABRA PAWAN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2007143650A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2007</creationdate><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>THOMAS TESSIL</creatorcontrib><creatorcontrib>CHHABRA PAWAN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>THOMAS TESSIL</au><au>CHHABRA PAWAN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Mechanism for read-only memory built-in self-test</title><date>2007-06-21</date><risdate>2007</risdate><abstract>In one embodiment, a method for on-die read only memory (ROM) built-in self-test (BIST) is disclosed. The method comprises testing odd word line entries of a read-only memory (ROM) array by performing two passes through the ROM array to test each odd word line entry for static and delay faults, testing even word line entries of the ROM array by performing two passes through the ROM array to test each even word line entry for static and delay faults, and testing each entry of the ROM array for static faults masked by dynamic faults by performing two passes through the ROM array. Other embodiments are also described.</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | eng |
recordid | cdi_epo_espacenet_US2007143650A1 |
source | esp@cenet |
subjects | INFORMATION STORAGE PHYSICS STATIC STORES |
title | Mechanism for read-only memory built-in self-test |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-23T05%3A31%3A41IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=THOMAS%20TESSIL&rft.date=2007-06-21&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2007143650A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |