Modulation of stress in stress film through ion implantation and its application in stress memorization technique

Some example embodiments of the invention provide a method to improve the performance of MOS devices by increasing the stress in the channel region. An example embodiment for a NMOS transistor is to form a tensile stress layer over a NMOS transistor. A heavy ion implantation is performed into the st...

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Hauptverfasser:	TEO LEE W, QUEK ELGIN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	TEO LEE W QUEK ELGIN
description	Some example embodiments of the invention provide a method to improve the performance of MOS devices by increasing the stress in the channel region. An example embodiment for a NMOS transistor is to form a tensile stress layer over a NMOS transistor. A heavy ion implantation is performed into the stress layer and then an anneal is performed. This increases the amount of stress from the stress layer that the gate retains/memorizes thereby increasing device performance.
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An example embodiment for a NMOS transistor is to form a tensile stress layer over a NMOS transistor. A heavy ion implantation is performed into the stress layer and then an anneal is performed. This increases the amount of stress from the stress layer that the gate retains/memorizes thereby increasing device performance.</abstract><oa>free_for_read</oa></addata></record>
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title	Modulation of stress in stress film through ion implantation and its application in stress memorization technique
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