Semiconductor device comprising a pn-heterojunction
An electric device is disclosed comprising a pn-heterojunction ( 4 ) formed by a nanowire ( 3 ) of 111 -V semiconductor material and a semiconductor body ( 1 ) comprising a group IV semiconductor material. The nanowire ( 3 ) is positioned in direct contact with the surface ( 2 ) of the semiconductor...
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| creator | BAKKERS ERIK PETRUS ANTONIUS M HURKX GODEFRIDUS A.M WAGEMANS MELANIE M.H MAGNEE PETRUS HUBERTUS C AGARWAL PRABHAT BALKENENDE ABRAHAM R HIJZEN ERWIN A |
| description | An electric device is disclosed comprising a pn-heterojunction ( 4 ) formed by a nanowire ( 3 ) of 111 -V semiconductor material and a semiconductor body ( 1 ) comprising a group IV semiconductor material. The nanowire ( 3 ) is positioned in direct contact with the surface ( 2 ) of the semiconductor body ( 1 ) and has a first conductivity type, the semiconductor body ( 1 ) has a second conductivity type opposite to the first conductivity type, the nanowire ( 3 ) forming with the semiconductor body ( 1 ) a pn-heterojunction ( 4 ). The nanowire of III-V semiconductor material can be used as a diffusion source ( 5 ) of dopant atoms into the semiconductor body. The diffused group III atoms and/or the group V atoms from the III-V material are the dopant atoms forming a region ( 6 ) in the semiconductor body in direct contact with the nanowire ( 3 ). |
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The nanowire ( 3 ) is positioned in direct contact with the surface ( 2 ) of the semiconductor body ( 1 ) and has a first conductivity type, the semiconductor body ( 1 ) has a second conductivity type opposite to the first conductivity type, the nanowire ( 3 ) forming with the semiconductor body ( 1 ) a pn-heterojunction ( 4 ). The nanowire of III-V semiconductor material can be used as a diffusion source ( 5 ) of dopant atoms into the semiconductor body. The diffused group III atoms and/or the group V atoms from the III-V material are the dopant atoms forming a region ( 6 ) in the semiconductor body in direct contact with the nanowire ( 3 ).</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Semiconductor device comprising a pn-heterojunction |
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