Semiconductor devices and methods of manufacture

A semiconductor device includes a substrate comprising a material selected from the group consisting of AlN, SiC, GaN, sapphire and combinations thereof. An n+ type epitaxial layer is disposed above substrate and comprises GaN or AlGaN. An n- type epitaxial layer is disposed above substrate and comp...

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Bibliographische Detailangaben

Hauptverfasser:	ARTHUR STEPHEN D, CAO XIAN-AN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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